JPH0358479A - Solid-state image sensing device - Google Patents
Solid-state image sensing deviceInfo
- Publication number
- JPH0358479A JPH0358479A JP1195102A JP19510289A JPH0358479A JP H0358479 A JPH0358479 A JP H0358479A JP 1195102 A JP1195102 A JP 1195102A JP 19510289 A JP19510289 A JP 19510289A JP H0358479 A JPH0358479 A JP H0358479A
- Authority
- JP
- Japan
- Prior art keywords
- section
- image sensing
- drain
- shielding film
- drain electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006243 chemical reaction Methods 0.000 claims abstract description 14
- 238000007599 discharging Methods 0.000 claims abstract description 7
- 238000003384 imaging method Methods 0.000 claims description 45
- 238000009825 accumulation Methods 0.000 claims description 6
- 230000003287 optical effect Effects 0.000 abstract 3
- 238000000034 method Methods 0.000 abstract 1
- 238000001444 catalytic combustion detection Methods 0.000 description 25
- 238000010408 sweeping Methods 0.000 description 18
- 238000000926 separation method Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
【発明の詳細な説明】 産業上の利用分野 本発明は固体撮像装置に関するものである。[Detailed description of the invention] Industrial applications The present invention relates to a solid-state imaging device.
従来の技術
近年、固体撮像装置は、その研究開発が進み、性能の点
から見ると、撮像管に匹敵ないし、上回るようになって
いる。そのなかでもフレームインターラインＣＣＤ固体
撮像装置（以下、ＦＩＴ−ＣＣＤと略記）は特に優れた
特性を持っており、実用化されている。BACKGROUND OF THE INVENTION In recent years, research and development of solid-state imaging devices has progressed, and from the point of view of performance, they are no longer comparable to or even superior to image pickup tubes. Among them, a frame interline CCD solid-state imaging device (hereinafter abbreviated as FIT-CCD) has particularly excellent characteristics and has been put into practical use.
以下、図面を参照しながら、ＦＩＴ−ＣＣＤの従来の構
成について説明する。Hereinafter, a conventional configuration of an FIT-CCD will be described with reference to the drawings.
第２図はＦ ＩＴ−ＣＣＤの全体構戒図である。FIG. 2 is an overall configuration diagram of the FIT-CCD.
第２図において、１は撮像部、２は蓄積部、３は光電変
換素子、４は撮像部の垂直ＣＣＤ、５は蓄積部の垂直Ｃ
ＣＤ，６は水平ＣＣＤ、７は出力アンプである。８は不
要電荷掃き出し用のドレインである。光電変換素子３で
発生した電荷のうち画像信号となる信号電荷は撮像部１
の垂直ＣＣＤ４へ読み出された後、垂直帰線期間に、蓄
積部２へ高速転送される。蓄積部２へ転送された電荷は
、有効走査期間に、一水平ラインごとに水平ＣＣＤ６に
読み出された後、一ビットごとに出力アンブ７から出力
される。また、光電変換素子３で発生した画像信号電荷
とならない不要電荷すなわち、非画像電荷は、撮像部１
と蓄積部２の間にある不要電荷掃き出し用のドレイン８
へ、撮像部１の垂直ＣＣＤ４及び蓄積部２の垂直ＣＣＤ
５により転送されて掃き出される。In FIG. 2, 1 is an imaging section, 2 is a storage section, 3 is a photoelectric conversion element, 4 is a vertical CCD of the imaging section, and 5 is a vertical CCD of the storage section.
CD, 6 is a horizontal CCD, and 7 is an output amplifier. 8 is a drain for sweeping out unnecessary charges. Of the charges generated in the photoelectric conversion element 3, signal charges that become image signals are transferred to the imaging unit 1.
After being read out to the vertical CCD 4, it is transferred at high speed to the storage section 2 during the vertical retrace period. The charges transferred to the storage section 2 are read out to the horizontal CCD 6 for each horizontal line during the effective scanning period, and then outputted from the output amplifier 7 for each bit. In addition, unnecessary charges that do not become image signal charges generated in the photoelectric conversion element 3, that is, non-image charges, are removed from the imaging unit 1.
and a drain 8 for sweeping out unnecessary charges between the storage section 2 and the storage section 2.
to, the vertical CCD 4 of the imaging section 1 and the vertical CCD of the storage section 2;
Transferred by 5 and swept out.
第３図は従来の不要電荷掃き出し用のドレイン領域の拡
大図である。９は光電変換素子の開口部、１０は撮像部
の遮光膜、ｌ１は遮光膜を兼ねた不要電荷掃き出し用の
ドレインの電極、１２は蓄積部の遮光膜、１３は撮像部
と蓄積部の垂直ＣＣＤ、１４は分離部への入射光である
。撮像部の遮光膜１０と遮光膜を兼ねた不要電荷掃き出
し用のドレイン電極１１と蓄積部の遮光膜１２は、いず
れもアルミニウム層で同時に形成された後、分離するマ
スクを用いてエッチングにより分離される。FIG. 3 is an enlarged view of a conventional drain region for sweeping out unnecessary charges. 9 is the opening of the photoelectric conversion element, 10 is the light-shielding film of the imaging section, l1 is the drain electrode for sweeping out unnecessary charges that also serves as a light-shielding film, 12 is the light-shielding film of the storage section, and 13 is the vertical line between the imaging section and the storage section. CCD 14 is incident light to the separation section. The light-shielding film 10 of the imaging section, the drain electrode 11 for sweeping out unnecessary charges that also serves as a light-shielding film, and the light-shielding film 12 of the storage section are all formed simultaneously with aluminum layers, and then separated by etching using a separating mask. Ru.
発明が解決しようとする課題
しかしながら上記のような構成では、撮像部の遮光膜１
０と遮光膜を兼ねた不要電荷を掃き出すドレイン電極１
１との間の分離部及び蓄積部の遮光膜１２と遮光膜を兼
ねた不要電荷を掃き出すドレイン電極１１との間の分離
部への入射光１４により撮像部と蓄積部の垂直ＣＣＤ１
３にスミア電荷が発生したしまう。Problems to be Solved by the Invention However, in the above configuration, the light shielding film 1 of the imaging section
Drain electrode 1 that sweeps out unnecessary charges and also serves as a light-shielding film
The vertical CCD 1 of the imaging part and the storage part is caused by the incident light 14 to the separation part between the light shielding film 12 of the separation part and the storage part between the imaging part 1 and the drain electrode 11 which also serves as a light shielding film and sweeps out unnecessary charges.
3, a smear charge occurs.
本発明はこのような従来の問題を解決する固体撮像装置
を提供するものである。The present invention provides a solid-state imaging device that solves these conventional problems.
課題を解決するための手段
上記問題を解決するために、本発明の固体撮像装置は、
光電変換素子の列の間に前記光電変換素子から読み出さ
れた電荷を転送する電荷転送部のある撮像部と、前記光
電変換素子から前記電荷部に読み出された電荷の一部ま
たは全てを蓄積できる蓄積部を持ち、前記撮像部と前記
蓄積部との間に、前記撮像部または前記蓄積部で発生し
た、非画像電荷を排出するためのドレインを持ち、前記
ドレインの電極が前記撮像部及び前記蓄積部へ延在して
前記撮像部及び前記蓄積部の遮光膜を兼ねた構造となっ
ている。Means for Solving the Problems In order to solve the above problems, the solid-state imaging device of the present invention includes:
an imaging section having a charge transfer section that transfers charges read out from the photoelectric conversion elements between rows of photoelectric conversion elements; and a part or all of the charges read out from the photoelectric conversion elements to the charge section. It has an accumulation section capable of accumulating, and has a drain between the imaging section and the accumulation section for discharging non-image charges generated in the imaging section or the accumulation section, and the electrode of the drain is connected to the imaging section. and extends to the storage section to serve as a light shielding film for the imaging section and the storage section.
作用
この構成によって、撮像部の遮光膜と遮光膜を兼ねた不
要電荷掃き出し用のドレイン電極との間、及び、蓄積部
の遮光膜と遮光膜を兼ねた不要電荷掃き出し用のドレイ
ン電極の間のそれぞれを分離する必要がなくなり、分離
部への入射光１４によるスミア電荷の発生を防ぐことが
できる。Function: With this configuration, there is a gap between the light-shielding film of the imaging section and the drain electrode that also serves as a light-shielding film and for sweeping out unnecessary charges, and between the light-shielding film of the storage section and the drain electrode that also serves as a light-shielding film and for sweeping out unnecessary charges. There is no need to separate them, and it is possible to prevent the generation of smear charges due to the incident light 14 on the separation section.
実施例
以下、本発明の一実施例について第１図を参照しながら
説明する。EXAMPLE Hereinafter, an example of the present invention will be described with reference to FIG.
なお、本実施例においても、ＦＩＴ−ＣＣＤの全体構成
そのものは、第２図に示した従来のものと同様である。In this embodiment as well, the overall configuration of the FIT-CCD itself is the same as the conventional one shown in FIG.
すなわち、撮像部１には光電変換素子３と垂直ｃｃＤ４
が設けられ、蓄積部２には垂直ＣＣＤ５が設けられ，撮
像部１と蓄積部２の間には不要電荷掃き出し用のドレイ
ン８が設けられ、蓄積部２の一端に水千ＣＣＤが設けら
れ、その出力側に出力アンブ７か設けられている。した
がって、Ｆ ＩＴ−ＣＣＤとしての基本的な動作も従来
のものと同一である。That is, the imaging unit 1 includes a photoelectric conversion element 3 and a vertical CCD 4.
is provided, a vertical CCD 5 is provided in the storage section 2, a drain 8 for sweeping out unnecessary charges is provided between the imaging section 1 and the storage section 2, a water CCD is provided at one end of the storage section 2, An output amplifier 7 is provided on the output side. Therefore, the basic operation as a FIT-CCD is also the same as that of the conventional one.
第１図は、そのようなＦＩＴ−ＣＣＤの不要電荷掃き出
し用のドレイン領域の拡大図である。第１図において、
１は撮像部、２は蓄積部、９は撮像部１に設けた光電変
換素子の開口部、８は不要電荷掃き出し用のドレイン、
１１は遮光膜を兼ねた不要電荷掃き出し用のドレイン電
極、１３は撮像部１と蓄積部２の垂直ＣＣＤである。FIG. 1 is an enlarged view of the drain region for sweeping out unnecessary charges of such a FIT-CCD. In Figure 1,
1 is an imaging section, 2 is an accumulation section, 9 is an opening of a photoelectric conversion element provided in the imaging section 1, 8 is a drain for sweeping out unnecessary charges,
11 is a drain electrode for sweeping out unnecessary charges which also serves as a light shielding film; 13 is a vertical CCD of the imaging section 1 and the storage section 2;
第１図から明らかなように、本実施例においては、不要
電荷掃き出し用ドレイン８の遮光膜を兼ねるドレイン電
極１１が、撮像部１および蓄積部２に延在した状態で形
威されている。このため、撮像部とドレイン電極との間
、およびドレイン電極と蓄積部の間の分離部に入射光（
第３図にお｛プる１４〉が照射されても、この入射光は
ドし・イン電極１１によって遮光される。したがって、
従来のように、分離部への入射光によって、撮像部１と
蓄積部２の垂直ＣＣＤ１３でスミア信号が増加すること
はなく、スミアの増加を防ぐことができる。As is clear from FIG. 1, in this embodiment, the drain electrode 11, which also serves as a light-shielding film of the drain 8 for sweeping out unnecessary charges, is extended to the imaging section 1 and the storage section 2. Therefore, the incident light (
Even if the beam 14 shown in FIG. 3 is irradiated, this incident light is blocked by the do/in electrode 11. therefore,
Unlike in the prior art, the smear signal does not increase on the vertical CCDs 13 of the imaging section 1 and the storage section 2 due to the light incident on the separating section, and an increase in smear can be prevented.
発明の効果
以上のように、本発明によれば、撮像部と蓄積部との間
にある不要電荷掃き出し用ドレインのドレイン電極を撮
像部及び蓄積部に延在させ、撮像部の遮光膜及び蓄積部
の遮光膜を兼ねるようにしたものであるから、不要電荷
掃き出し用のドレイン領域でのスミアの増加を防ぐこと
ができ、その実用的効果は大である。Effects of the Invention As described above, according to the present invention, the drain electrode of the drain for sweeping out unnecessary charges located between the imaging section and the storage section is extended to the imaging section and the storage section, and the light shielding film of the imaging section and the storage Since it also serves as a light-shielding film in the area, it is possible to prevent an increase in smear in the drain region for sweeping out unnecessary charges, and its practical effect is great.
第１図は本発明の一実施例固体撮像装置の不要電荷掃き
出し用のドレイン領域の拡大図、第２図は従来のＦＩＴ
−ＣＣＤの全体構成図、第３図は従来の不要電荷掃き出
し用のドレイン領域の拡大図である。
１・・・・・・撮像部、２・・・・・・蓄積部、３・・
・・・・光電変換素子、４・・・・・・撮像部の垂直Ｃ
ＣＤ、５・・・・・・蓄積部の垂直ＣＣＤ、６・・・・
・・水平ＣＣＤ、７・・・・・・出力アンプ、８・・・
・・・不要電荷掃き出し用のドレイン、９・・・・・・
光電変換素子の開口部、１０・・・・・・撮像部の遮光
膜、１１・・・・・・遮光膜を兼ねた不要電荷掃き出し
用のドレイン電極、ｌ２・・・・・・蓄積部の遮光膜、
ｌ３・・・・・・撮像部と蓄積部の垂直ＣＣＤ、１４・
・・・・・分離部への入射光。FIG. 1 is an enlarged view of the drain region for sweeping out unnecessary charges in a solid-state imaging device according to an embodiment of the present invention, and FIG. 2 is an enlarged view of a conventional FIT.
- An overall configuration diagram of a CCD, and FIG. 3 is an enlarged view of a conventional drain region for sweeping out unnecessary charges. 1...imaging section, 2...accumulation section, 3...
...Photoelectric conversion element, 4... Vertical C of the imaging section
CD, 5... Vertical CCD of storage section, 6...
...Horizontal CCD, 7... Output amplifier, 8...
...Drain for sweeping out unnecessary charges, 9...
Opening of the photoelectric conversion element, 10... Light-shielding film of the imaging section, 11... Drain electrode for sweeping out unnecessary charges that also serves as a light-shielding film, l2...... of the storage section light shielding film,
l3... Vertical CCD of imaging section and storage section, 14.
...Incoming light to the separation section.
Claims (1)
れた電荷を転送する電荷転送部のある撮像部と前記撮像
部の電荷の一部または全てを蓄積できる蓄積部とを持ち
、かつ、前記撮像部と前記蓄積部との間に、前記撮像部
または前記蓄積部で発生した非画像電荷を排出するため
のドレインを持ち、前記ドレインの電極の一部を前記撮
像部及び前記蓄積部に延在させ、前記撮像部及び前記蓄
積部の遮光膜を兼用したことを特徴とする固体撮像装置
。an imaging unit having a charge transfer unit that transfers charges read out from the photoelectric conversion elements between rows of photoelectric conversion elements; and an accumulation unit that can accumulate part or all of the charges in the imaging unit; A drain is provided between the imaging section and the storage section for discharging non-image charges generated in the imaging section or the storage section, and a part of the electrode of the drain is connected to the imaging section and the storage section. A solid-state imaging device, characterized in that the solid-state imaging device is extended and serves as a light-shielding film for the imaging section and the storage section.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1195102A JPH0358479A (en) | 1989-07-26 | 1989-07-26 | Solid-state image sensing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1195102A JPH0358479A (en) | 1989-07-26 | 1989-07-26 | Solid-state image sensing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0358479A true JPH0358479A (en) | 1991-03-13 |
Family
ID=16335556
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1195102A Pending JPH0358479A (en) | 1989-07-26 | 1989-07-26 | Solid-state image sensing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0358479A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0774339A (en) * | 1993-09-01 | 1995-03-17 | Nec Corp | Solid-state image sensing device and driving method therefor |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53132286A (en) * | 1977-04-22 | 1978-11-17 | Sony Corp | Charge transfer device |
| JPS57109476A (en) * | 1980-12-25 | 1982-07-07 | Matsushita Electronics Corp | Solid image pickup device |
| JPS6484749A (en) * | 1987-09-28 | 1989-03-30 | Matsushita Electronics Corp | Solid-state image sensing device |
-
1989
- 1989-07-26 JP JP1195102A patent/JPH0358479A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53132286A (en) * | 1977-04-22 | 1978-11-17 | Sony Corp | Charge transfer device |
| JPS57109476A (en) * | 1980-12-25 | 1982-07-07 | Matsushita Electronics Corp | Solid image pickup device |
| JPS6484749A (en) * | 1987-09-28 | 1989-03-30 | Matsushita Electronics Corp | Solid-state image sensing device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0774339A (en) * | 1993-09-01 | 1995-03-17 | Nec Corp | Solid-state image sensing device and driving method therefor |
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