JPS53124040A - Fuse matrix memory device - Google Patents

Fuse matrix memory device

Info

Publication number
JPS53124040A
JPS53124040A JP3846677A JP3846677A JPS53124040A JP S53124040 A JPS53124040 A JP S53124040A JP 3846677 A JP3846677 A JP 3846677A JP 3846677 A JP3846677 A JP 3846677A JP S53124040 A JPS53124040 A JP S53124040A
Authority
JP
Japan
Prior art keywords
memory device
matrix memory
fuse matrix
fuse
prom
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3846677A
Other languages
Japanese (ja)
Inventor
Masao Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP3846677A priority Critical patent/JPS53124040A/en
Publication of JPS53124040A publication Critical patent/JPS53124040A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements

Landscapes

  • Read Only Memory (AREA)

Abstract

PURPOSE:To realize a PROM of element-structure comprising one unit of bipolar transistor Tr, two units of MOS'Tr plus the fuse, and thus to dissolve the problems such as the fusing time and others as well as to enable the action with the low voltage of 1-2V.
JP3846677A 1977-04-06 1977-04-06 Fuse matrix memory device Pending JPS53124040A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3846677A JPS53124040A (en) 1977-04-06 1977-04-06 Fuse matrix memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3846677A JPS53124040A (en) 1977-04-06 1977-04-06 Fuse matrix memory device

Publications (1)

Publication Number Publication Date
JPS53124040A true JPS53124040A (en) 1978-10-30

Family

ID=12526015

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3846677A Pending JPS53124040A (en) 1977-04-06 1977-04-06 Fuse matrix memory device

Country Status (1)

Country Link
JP (1) JPS53124040A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4480318A (en) * 1982-02-18 1984-10-30 Fairchild Camera & Instrument Corp. Method of programming of junction-programmable read-only memories
US5045726A (en) * 1990-05-16 1991-09-03 North American Philips Corporation Low power programming circuit for user programmable digital logic array

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4480318A (en) * 1982-02-18 1984-10-30 Fairchild Camera & Instrument Corp. Method of programming of junction-programmable read-only memories
US5045726A (en) * 1990-05-16 1991-09-03 North American Philips Corporation Low power programming circuit for user programmable digital logic array

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