Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co LtdfiledCriticalToshiba Corp
Priority to JP1029376ApriorityCriticalpatent/JPS5294081A/en
Publication of JPS5294081ApublicationCriticalpatent/JPS5294081A/en
PURPOSE:To diffuse P on the base plate without Si3N4 film thereon by coating A 1 film after the patterning with PSG film, forming selectively PSG film by dissolving A 1 and thermally treating.
JP1029376A1976-02-041976-02-04Process for preparing semi-conductor system
PendingJPS5294081A
(en)