JPS5292668U - - Google Patents
Info
- Publication number
- JPS5292668U JPS5292668U JP17965075U JP17965075U JPS5292668U JP S5292668 U JPS5292668 U JP S5292668U JP 17965075 U JP17965075 U JP 17965075U JP 17965075 U JP17965075 U JP 17965075U JP S5292668 U JPS5292668 U JP S5292668U
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1975179650U JPS5718769Y2 (en:Method) | 1975-12-31 | 1975-12-31 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1975179650U JPS5718769Y2 (en:Method) | 1975-12-31 | 1975-12-31 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5292668U true JPS5292668U (en:Method) | 1977-07-11 |
| JPS5718769Y2 JPS5718769Y2 (en:Method) | 1982-04-20 |
Family
ID=28657894
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1975179650U Expired JPS5718769Y2 (en:Method) | 1975-12-31 | 1975-12-31 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5718769Y2 (en:Method) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6345862A (ja) * | 1986-08-13 | 1988-02-26 | Res Dev Corp Of Japan | 半導体不揮発性メモリ |
| JP2005057296A (ja) * | 2003-08-07 | 2005-03-03 | Samsung Electronics Co Ltd | ダブルフローティングゲート構造を持つスプリットゲート型不揮発性半導体メモリ素子およびその製造方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4915380A (en:Method) * | 1972-05-18 | 1974-02-09 |
-
1975
- 1975-12-31 JP JP1975179650U patent/JPS5718769Y2/ja not_active Expired
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4915380A (en:Method) * | 1972-05-18 | 1974-02-09 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6345862A (ja) * | 1986-08-13 | 1988-02-26 | Res Dev Corp Of Japan | 半導体不揮発性メモリ |
| JP2005057296A (ja) * | 2003-08-07 | 2005-03-03 | Samsung Electronics Co Ltd | ダブルフローティングゲート構造を持つスプリットゲート型不揮発性半導体メモリ素子およびその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5718769Y2 (en:Method) | 1982-04-20 |