JPS5290237A - Accumulating transfer of charge transfer element - Google Patents

Accumulating transfer of charge transfer element

Info

Publication number
JPS5290237A
JPS5290237A JP586876A JP586876A JPS5290237A JP S5290237 A JPS5290237 A JP S5290237A JP 586876 A JP586876 A JP 586876A JP 586876 A JP586876 A JP 586876A JP S5290237 A JPS5290237 A JP S5290237A
Authority
JP
Japan
Prior art keywords
transfer
accumulating
charge
case
space area
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP586876A
Other languages
Japanese (ja)
Other versions
JPS5736755B2 (en
Inventor
Susumu Kayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP586876A priority Critical patent/JPS5290237A/en
Publication of JPS5290237A publication Critical patent/JPS5290237A/en
Priority to US05/955,212 priority patent/US4211937A/en
Publication of JPS5736755B2 publication Critical patent/JPS5736755B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H01L27/1057—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components comprising charge coupled devices [CCD] or charge injection devices [CID]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/287—Organisation of a multiplicity of shift registers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Networks Using Active Elements (AREA)

Abstract

PURPOSE:To increase integration and to decrese transfer count by accumulating to remain one space area per unit of clock cycle, in case of accumulation of signal charge, and by transfering the charge to the space area, in case of transfer of signal charge.
JP586876A 1976-01-23 1976-01-23 Accumulating transfer of charge transfer element Granted JPS5290237A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP586876A JPS5290237A (en) 1976-01-23 1976-01-23 Accumulating transfer of charge transfer element
US05/955,212 US4211937A (en) 1976-01-23 1978-10-27 Multi-channel charge coupled transfer device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP586876A JPS5290237A (en) 1976-01-23 1976-01-23 Accumulating transfer of charge transfer element

Publications (2)

Publication Number Publication Date
JPS5290237A true JPS5290237A (en) 1977-07-29
JPS5736755B2 JPS5736755B2 (en) 1982-08-05

Family

ID=11622913

Family Applications (1)

Application Number Title Priority Date Filing Date
JP586876A Granted JPS5290237A (en) 1976-01-23 1976-01-23 Accumulating transfer of charge transfer element

Country Status (1)

Country Link
JP (1) JPS5290237A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60126000A (en) * 1983-12-13 1985-07-05 Sony Corp Signal transmitter
JP2019057602A (en) * 2017-09-20 2019-04-11 株式会社東芝 Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60126000A (en) * 1983-12-13 1985-07-05 Sony Corp Signal transmitter
JP2019057602A (en) * 2017-09-20 2019-04-11 株式会社東芝 Semiconductor device

Also Published As

Publication number Publication date
JPS5736755B2 (en) 1982-08-05

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