JPS5289070U - - Google Patents
Info
- Publication number
- JPS5289070U JPS5289070U JP17814776U JP17814776U JPS5289070U JP S5289070 U JPS5289070 U JP S5289070U JP 17814776 U JP17814776 U JP 17814776U JP 17814776 U JP17814776 U JP 17814776U JP S5289070 U JPS5289070 U JP S5289070U
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Measuring Volume Flow (AREA)
- Indication And Recording Devices For Special Purposes And Tariff Metering Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17814776U JPS5313411Y2 (en, 2012) | 1976-12-29 | 1976-12-29 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17814776U JPS5313411Y2 (en, 2012) | 1976-12-29 | 1976-12-29 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5289070U true JPS5289070U (en, 2012) | 1977-07-02 |
| JPS5313411Y2 JPS5313411Y2 (en, 2012) | 1978-04-11 |
Family
ID=28656436
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17814776U Expired JPS5313411Y2 (en, 2012) | 1976-12-29 | 1976-12-29 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5313411Y2 (en, 2012) |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02196177A (ja) * | 1989-01-24 | 1990-08-02 | Ebara Corp | 可変速給水装置 |
| US6855992B2 (en) | 2001-07-24 | 2005-02-15 | Motorola Inc. | Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same |
| US6885065B2 (en) | 2002-11-20 | 2005-04-26 | Freescale Semiconductor, Inc. | Ferromagnetic semiconductor structure and method for forming the same |
| US6916717B2 (en) | 2002-05-03 | 2005-07-12 | Motorola, Inc. | Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate |
| US6965128B2 (en) | 2003-02-03 | 2005-11-15 | Freescale Semiconductor, Inc. | Structure and method for fabricating semiconductor microresonator devices |
| US6992321B2 (en) | 2001-07-13 | 2006-01-31 | Motorola, Inc. | Structure and method for fabricating semiconductor structures and devices utilizing piezoelectric materials |
| US7005717B2 (en) | 2000-05-31 | 2006-02-28 | Freescale Semiconductor, Inc. | Semiconductor device and method |
| US7019332B2 (en) | 2001-07-20 | 2006-03-28 | Freescale Semiconductor, Inc. | Fabrication of a wavelength locker within a semiconductor structure |
| US7020374B2 (en) | 2003-02-03 | 2006-03-28 | Freescale Semiconductor, Inc. | Optical waveguide structure and method for fabricating the same |
| US7045815B2 (en) | 2001-04-02 | 2006-05-16 | Freescale Semiconductor, Inc. | Semiconductor structure exhibiting reduced leakage current and method of fabricating same |
| US7105866B2 (en) | 2000-07-24 | 2006-09-12 | Freescale Semiconductor, Inc. | Heterojunction tunneling diodes and process for fabricating same |
| US7161227B2 (en) | 2001-08-14 | 2007-01-09 | Motorola, Inc. | Structure and method for fabricating semiconductor structures and devices for detecting an object |
| US7169619B2 (en) | 2002-11-19 | 2007-01-30 | Freescale Semiconductor, Inc. | Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process |
| US7211852B2 (en) | 2001-01-19 | 2007-05-01 | Freescale Semiconductor, Inc. | Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate |
| US7342276B2 (en) | 2001-10-17 | 2008-03-11 | Freescale Semiconductor, Inc. | Method and apparatus utilizing monocrystalline insulator |
-
1976
- 1976-12-29 JP JP17814776U patent/JPS5313411Y2/ja not_active Expired
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02196177A (ja) * | 1989-01-24 | 1990-08-02 | Ebara Corp | 可変速給水装置 |
| US7005717B2 (en) | 2000-05-31 | 2006-02-28 | Freescale Semiconductor, Inc. | Semiconductor device and method |
| US7105866B2 (en) | 2000-07-24 | 2006-09-12 | Freescale Semiconductor, Inc. | Heterojunction tunneling diodes and process for fabricating same |
| US7211852B2 (en) | 2001-01-19 | 2007-05-01 | Freescale Semiconductor, Inc. | Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate |
| US7045815B2 (en) | 2001-04-02 | 2006-05-16 | Freescale Semiconductor, Inc. | Semiconductor structure exhibiting reduced leakage current and method of fabricating same |
| US6992321B2 (en) | 2001-07-13 | 2006-01-31 | Motorola, Inc. | Structure and method for fabricating semiconductor structures and devices utilizing piezoelectric materials |
| US7019332B2 (en) | 2001-07-20 | 2006-03-28 | Freescale Semiconductor, Inc. | Fabrication of a wavelength locker within a semiconductor structure |
| US6855992B2 (en) | 2001-07-24 | 2005-02-15 | Motorola Inc. | Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same |
| US7161227B2 (en) | 2001-08-14 | 2007-01-09 | Motorola, Inc. | Structure and method for fabricating semiconductor structures and devices for detecting an object |
| US7342276B2 (en) | 2001-10-17 | 2008-03-11 | Freescale Semiconductor, Inc. | Method and apparatus utilizing monocrystalline insulator |
| US6916717B2 (en) | 2002-05-03 | 2005-07-12 | Motorola, Inc. | Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate |
| US7169619B2 (en) | 2002-11-19 | 2007-01-30 | Freescale Semiconductor, Inc. | Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process |
| US6885065B2 (en) | 2002-11-20 | 2005-04-26 | Freescale Semiconductor, Inc. | Ferromagnetic semiconductor structure and method for forming the same |
| US6965128B2 (en) | 2003-02-03 | 2005-11-15 | Freescale Semiconductor, Inc. | Structure and method for fabricating semiconductor microresonator devices |
| US7020374B2 (en) | 2003-02-03 | 2006-03-28 | Freescale Semiconductor, Inc. | Optical waveguide structure and method for fabricating the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5313411Y2 (en, 2012) | 1978-04-11 |