JPS5278681A - Method and apparatus for growing sigle crystals - Google Patents

Method and apparatus for growing sigle crystals

Info

Publication number
JPS5278681A
JPS5278681A JP14133776A JP14133776A JPS5278681A JP S5278681 A JPS5278681 A JP S5278681A JP 14133776 A JP14133776 A JP 14133776A JP 14133776 A JP14133776 A JP 14133776A JP S5278681 A JPS5278681 A JP S5278681A
Authority
JP
Japan
Prior art keywords
sigle
crystals
growing
sigle crystals
growing sigle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14133776A
Other languages
English (en)
Japanese (ja)
Inventor
Torukusudorufu Buorufugangu
Buerutsu Furitsutsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of JPS5278681A publication Critical patent/JPS5278681A/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00—Single-crystal growth from melt solutions using molten solvents

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP14133776A 1975-11-26 1976-11-26 Method and apparatus for growing sigle crystals Pending JPS5278681A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19752553113 DE2553113C3 (de) 1975-11-26 1975-11-26 Vorrichtung zum Züchten von Einkristallen aus schmelzflüssigen Lösungen

Publications (1)

Publication Number Publication Date
JPS5278681A true JPS5278681A (en) 1977-07-02

Family

ID=5962690

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14133776A Pending JPS5278681A (en) 1975-11-26 1976-11-26 Method and apparatus for growing sigle crystals

Country Status (4)

Country Link
JP (1) JPS5278681A (fr)
DE (1) DE2553113C3 (fr)
FR (1) FR2332800A1 (fr)
GB (1) GB1561090A (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006025420A1 (fr) * 2004-09-03 2006-03-09 Sumitomo Metal Industries, Ltd. Procédé pour la préparation d’un monocristal de carbure de silicium
CN110655083B (zh) * 2019-11-12 2021-04-27 四川永祥新能源有限公司 一种多晶硅还原炉

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3804060A (en) * 1970-03-27 1974-04-16 Sperry Rand Corp Liquid epitaxy apparatus
JPS53271B1 (fr) * 1971-03-05 1978-01-06

Also Published As

Publication number Publication date
FR2332800A1 (fr) 1977-06-24
DE2553113A1 (de) 1977-06-02
DE2553113C3 (de) 1982-04-08
DE2553113B2 (de) 1981-07-02
GB1561090A (en) 1980-02-13

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