JPS526150B2 - - Google Patents

Info

Publication number
JPS526150B2
JPS526150B2 JP48130324A JP13032473A JPS526150B2 JP S526150 B2 JPS526150 B2 JP S526150B2 JP 48130324 A JP48130324 A JP 48130324A JP 13032473 A JP13032473 A JP 13032473A JP S526150 B2 JPS526150 B2 JP S526150B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP48130324A
Other versions
JPS4997578A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4997578A publication Critical patent/JPS4997578A/ja
Publication of JPS526150B2 publication Critical patent/JPS526150B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N80/00—Bulk negative-resistance effect devices
    • H10N80/10—Gunn-effect devices
    • H10N80/107—Gunn diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
JP48130324A 1972-11-24 1973-11-21 Expired JPS526150B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB5438872A GB1439759A (en) 1972-11-24 1972-11-24 Semiconductor devices

Publications (2)

Publication Number Publication Date
JPS4997578A JPS4997578A (ja) 1974-09-14
JPS526150B2 true JPS526150B2 (ja) 1977-02-19

Family

ID=10470849

Family Applications (1)

Application Number Title Priority Date Filing Date
JP48130324A Expired JPS526150B2 (ja) 1972-11-24 1973-11-21

Country Status (8)

Country Link
US (1) US3836988A (ja)
JP (1) JPS526150B2 (ja)
AU (1) AU475207B2 (ja)
CA (1) CA990853A (ja)
DE (1) DE2357640C3 (ja)
FR (1) FR2208192B1 (ja)
GB (1) GB1439759A (ja)
NL (1) NL7315850A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5489461U (ja) * 1977-12-08 1979-06-25

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1049127A (en) * 1974-03-05 1979-02-20 Kunio Itoh Semiconductor devices with improved heat radiation and current concentration
US4238763A (en) * 1977-08-10 1980-12-09 National Research Development Corporation Solid state microwave devices with small active contact and large passive contact
JPS5676573A (en) * 1979-11-28 1981-06-24 Nippon Telegr & Teleph Corp <Ntt> Field effect semiconductor device
US4855796A (en) * 1986-06-06 1989-08-08 Hughes Aircraft Company Beam lead mixer diode
KR100227149B1 (ko) * 1997-04-15 1999-10-15 김영환 반도체 패키지
US6344658B1 (en) * 1998-04-28 2002-02-05 New Japan Radio Co., Ltd. Gunn diode, NRD guide gunn oscillator, fabricating method of gunn diode and structure for assembly of the same

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3544854A (en) * 1966-12-02 1970-12-01 Texas Instruments Inc Ohmic contacts for gallium arsenide semiconductors
US3534267A (en) * 1966-12-30 1970-10-13 Texas Instruments Inc Integrated 94 ghz. local oscillator and mixer
US3377566A (en) * 1967-01-13 1968-04-09 Ibm Voltage controlled variable frequency gunn-effect oscillator
US3516017A (en) * 1967-06-14 1970-06-02 Hitachi Ltd Microwave semiconductor device
DE1614574A1 (de) * 1967-08-04 1970-10-29 Siemens Ag Halbleiterbauelement,insbesondere Halbleiterbauelement mit pn-UEbergang
US3451011A (en) * 1967-09-22 1969-06-17 Bell Telephone Labor Inc Two-valley semiconductor devices and circuits
US3590478A (en) * 1968-05-20 1971-07-06 Sony Corp Method of forming electrical leads for semiconductor device
GB1286674A (en) * 1969-06-10 1972-08-23 Secr Defence Transferred electron devices
US3659160A (en) * 1970-02-13 1972-04-25 Texas Instruments Inc Integrated circuit process utilizing orientation dependent silicon etch
US3702947A (en) * 1970-10-21 1972-11-14 Itt Monolithic darlington transistors with common collector and seperate subcollectors
US3667004A (en) * 1970-10-26 1972-05-30 Bell Telephone Labor Inc Electroluminescent semiconductor display apparatus
US3697831A (en) * 1970-12-28 1972-10-10 Us Navy Series electrical, parallel thermal gunn devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5489461U (ja) * 1977-12-08 1979-06-25

Also Published As

Publication number Publication date
US3836988A (en) 1974-09-17
CA990853A (en) 1976-06-08
FR2208192B1 (ja) 1976-11-19
AU475207B2 (en) 1976-08-12
DE2357640C3 (de) 1981-06-11
DE2357640B2 (de) 1980-10-09
GB1439759A (en) 1976-06-16
JPS4997578A (ja) 1974-09-14
NL7315850A (ja) 1974-05-28
AU6273073A (en) 1975-05-22
FR2208192A1 (ja) 1974-06-21
DE2357640A1 (de) 1974-10-17

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