JPS5249716B1 - - Google Patents
Info
- Publication number
- JPS5249716B1 JPS5249716B1 JP46050504A JP5050471A JPS5249716B1 JP S5249716 B1 JPS5249716 B1 JP S5249716B1 JP 46050504 A JP46050504 A JP 46050504A JP 5050471 A JP5050471 A JP 5050471A JP S5249716 B1 JPS5249716 B1 JP S5249716B1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/32—Non-oxide glass compositions, e.g. binary or ternary halides, sulfides or nitrides of germanium, selenium or tellurium
- C03C3/321—Chalcogenide glasses, e.g. containing S, Se, Te
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8825—Selenides, e.g. GeSe
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Glass Compositions (AREA)
- Non-Adjustable Resistors (AREA)
- Battery Electrode And Active Subsutance (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP46050504A JPS5249716B1 (de) | 1971-07-08 | 1971-07-08 | |
| US00270405A US3772006A (en) | 1971-07-08 | 1972-07-10 | Amorphous material for active elements exhibiting a memory effect |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP46050504A JPS5249716B1 (de) | 1971-07-08 | 1971-07-08 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5249716B1 true JPS5249716B1 (de) | 1977-12-19 |
Family
ID=12860771
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP46050504A Pending JPS5249716B1 (de) | 1971-07-08 | 1971-07-08 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US3772006A (de) |
| JP (1) | JPS5249716B1 (de) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4945420B2 (ja) * | 2006-12-05 | 2012-06-06 | 韓國電子通信研究院 | 光電物質及びその製造方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2822300A (en) * | 1954-03-29 | 1958-02-04 | Horizons Inc | Photoconductive material |
| US3524745A (en) * | 1967-01-13 | 1970-08-18 | Xerox Corp | Photoconductive alloy of arsenic,antimony and selenium |
| US3615413A (en) * | 1969-06-23 | 1971-10-26 | Xerox Corp | Indium doping of selenium-arsenic photoconductive alloys |
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1971
- 1971-07-08 JP JP46050504A patent/JPS5249716B1/ja active Pending
-
1972
- 1972-07-10 US US00270405A patent/US3772006A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US3772006A (en) | 1973-11-13 |