JPS524906B2 - - Google Patents
Info
- Publication number
- JPS524906B2 JPS524906B2 JP49102123A JP10212374A JPS524906B2 JP S524906 B2 JPS524906 B2 JP S524906B2 JP 49102123 A JP49102123 A JP 49102123A JP 10212374 A JP10212374 A JP 10212374A JP S524906 B2 JPS524906 B2 JP S524906B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US395319A US3866310A (en) | 1973-09-07 | 1973-09-07 | Method for making the self-aligned gate contact of a semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5057186A JPS5057186A (ja) | 1975-05-19 |
JPS524906B2 true JPS524906B2 (ja) | 1977-02-08 |
Family
ID=23562534
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP49102123A Expired JPS524906B2 (ja) | 1973-09-07 | 1974-09-06 |
Country Status (2)
Country | Link |
---|---|
US (1) | US3866310A (ja) |
JP (1) | JPS524906B2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5845574B2 (ja) * | 1978-06-15 | 1983-10-11 | トヨタ自動車株式会社 | 内燃機関の吸気通路装置 |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4078963A (en) * | 1973-12-10 | 1978-03-14 | U.S. Philips Corporation | Method of manufacturing a semiconductor device, having a pattern of conductors on a supporting body |
US3981757A (en) * | 1975-04-14 | 1976-09-21 | Globe-Union Inc. | Method of fabricating keyboard apparatus |
GB1545208A (en) * | 1975-09-27 | 1979-05-02 | Plessey Co Ltd | Electrical solid state devices |
JPS52117556A (en) * | 1976-03-30 | 1977-10-03 | Toshiba Corp | Photo mask and its manufacturing method |
US4077111A (en) * | 1976-07-14 | 1978-03-07 | Westinghouse Electric Corporation | Self-aligned gate field effect transistor and method for making same |
FR2431768A1 (fr) * | 1978-07-20 | 1980-02-15 | Labo Electronique Physique | Perfectionnement au procede de fabrication de dispositifs semi-conducteurs par auto-alignement et dispositifs obtenus |
US4266333A (en) * | 1979-04-27 | 1981-05-12 | Rca Corporation | Method of making a Schottky barrier field effect transistor |
US4325181A (en) * | 1980-12-17 | 1982-04-20 | The United States Of America As Represented By The Secretary Of The Navy | Simplified fabrication method for high-performance FET |
US4514893A (en) * | 1983-04-29 | 1985-05-07 | At&T Bell Laboratories | Fabrication of FETs |
JPS6142140A (ja) * | 1984-07-30 | 1986-02-28 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | 自己整合構造の形成方法 |
FR2571177B1 (fr) * | 1984-10-02 | 1987-02-27 | Thomson Csf | Procede de realisation de grilles en siliciure ou en silicium pour circuit integre comportant des elements du type grille - isolant - semi-conducteur |
US4710478A (en) * | 1985-05-20 | 1987-12-01 | United States Of America As Represented By The Secretary Of The Navy | Method for making germanium/gallium arsenide high mobility complementary logic transistors |
JPS6239075A (ja) * | 1985-08-14 | 1987-02-20 | Mitsubishi Electric Corp | ガリウム砒素半導体集積回路 |
US7132701B1 (en) * | 2001-07-27 | 2006-11-07 | Fairchild Semiconductor Corporation | Contact method for thin silicon carbide epitaxial layer and semiconductor devices formed by those methods |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3438121A (en) * | 1966-07-21 | 1969-04-15 | Gen Instrument Corp | Method of making a phosphorous-protected semiconductor device |
DE1958542A1 (de) * | 1968-11-22 | 1970-07-09 | Tokyo Shibaura Electric Co | Halbleitervorrichtung |
US3761785A (en) * | 1971-04-23 | 1973-09-25 | Bell Telephone Labor Inc | Methods for making transistor structures |
-
1973
- 1973-09-07 US US395319A patent/US3866310A/en not_active Expired - Lifetime
-
1974
- 1974-09-06 JP JP49102123A patent/JPS524906B2/ja not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5845574B2 (ja) * | 1978-06-15 | 1983-10-11 | トヨタ自動車株式会社 | 内燃機関の吸気通路装置 |
Also Published As
Publication number | Publication date |
---|---|
JPS5057186A (ja) | 1975-05-19 |
US3866310A (en) | 1975-02-18 |