JPS5248481A - Charge coupled device and method of producing same - Google Patents
Charge coupled device and method of producing sameInfo
- Publication number
- JPS5248481A JPS5248481A JP8804176A JP8804176A JPS5248481A JP S5248481 A JPS5248481 A JP S5248481A JP 8804176 A JP8804176 A JP 8804176A JP 8804176 A JP8804176 A JP 8804176A JP S5248481 A JPS5248481 A JP S5248481A
- Authority
- JP
- Japan
- Prior art keywords
- coupled device
- charge coupled
- producing same
- producing
- same
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66946—Charge transfer devices
- H01L29/66954—Charge transfer devices with an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising semiconducting material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1062—Channel region of field-effect devices of charge coupled devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42396—Gate electrodes for field effect devices for charge coupled devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76866—Surface Channel CCD
- H01L29/76875—Two-Phase CCD
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US59831675A | 1975-07-23 | 1975-07-23 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5248481A true JPS5248481A (en) | 1977-04-18 |
JPS6141148B2 JPS6141148B2 (en) | 1986-09-12 |
Family
ID=24395079
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8804176A Granted JPS5248481A (en) | 1975-07-23 | 1976-07-23 | Charge coupled device and method of producing same |
Country Status (7)
Country | Link |
---|---|
JP (1) | JPS5248481A (en) |
CA (1) | CA1101550A (en) |
DE (1) | DE2633197A1 (en) |
FR (1) | FR2330145A1 (en) |
GB (1) | GB1558342A (en) |
IT (1) | IT1074912B (en) |
NL (1) | NL7608198A (en) |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2314260A1 (en) * | 1972-05-30 | 1973-12-13 | Ibm | CHARGE-COUPLED SEMI-CONDUCTOR ARRANGEMENT AND METHOD OF MANUFACTURING IT |
US3927468A (en) * | 1973-12-28 | 1975-12-23 | Fairchild Camera Instr Co | Self aligned CCD element fabrication method therefor |
-
1976
- 1976-07-20 CA CA257,421A patent/CA1101550A/en not_active Expired
- 1976-07-21 IT IT5054776A patent/IT1074912B/en active
- 1976-07-22 GB GB3061976A patent/GB1558342A/en not_active Expired
- 1976-07-23 DE DE19762633197 patent/DE2633197A1/en not_active Withdrawn
- 1976-07-23 FR FR7622533A patent/FR2330145A1/en active Granted
- 1976-07-23 JP JP8804176A patent/JPS5248481A/en active Granted
- 1976-07-23 NL NL7608198A patent/NL7608198A/en not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
NL7608198A (en) | 1977-01-25 |
GB1558342A (en) | 1979-12-28 |
IT1074912B (en) | 1985-04-22 |
FR2330145A1 (en) | 1977-05-27 |
FR2330145B1 (en) | 1980-09-12 |
CA1101550A (en) | 1981-05-19 |
DE2633197A1 (en) | 1977-02-24 |
JPS6141148B2 (en) | 1986-09-12 |
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