IT1074912B - IMPROVEMENT IN CCD TYPE SEMICONDUCTOR INTEGRATED DEVICES - Google Patents

IMPROVEMENT IN CCD TYPE SEMICONDUCTOR INTEGRATED DEVICES

Info

Publication number
IT1074912B
IT1074912B IT5054776A IT5054776A IT1074912B IT 1074912 B IT1074912 B IT 1074912B IT 5054776 A IT5054776 A IT 5054776A IT 5054776 A IT5054776 A IT 5054776A IT 1074912 B IT1074912 B IT 1074912B
Authority
IT
Italy
Prior art keywords
improvement
type semiconductor
semiconductor integrated
integrated devices
ccd type
Prior art date
Application number
IT5054776A
Other languages
Italian (it)
Inventor
Felix Tasch Jr
Robert C Frye
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Application granted granted Critical
Publication of IT1074912B publication Critical patent/IT1074912B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66946—Charge transfer devices
    • H01L29/66954—Charge transfer devices with an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising semiconducting material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1062—Channel region of field-effect devices of charge coupled devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42396—Gate electrodes for field effect devices for charge coupled devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76866—Surface Channel CCD
    • H01L29/76875—Two-Phase CCD

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Solid State Image Pick-Up Elements (AREA)
IT5054776A 1975-07-23 1976-07-21 IMPROVEMENT IN CCD TYPE SEMICONDUCTOR INTEGRATED DEVICES IT1074912B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US59831675A 1975-07-23 1975-07-23

Publications (1)

Publication Number Publication Date
IT1074912B true IT1074912B (en) 1985-04-22

Family

ID=24395079

Family Applications (1)

Application Number Title Priority Date Filing Date
IT5054776A IT1074912B (en) 1975-07-23 1976-07-21 IMPROVEMENT IN CCD TYPE SEMICONDUCTOR INTEGRATED DEVICES

Country Status (7)

Country Link
JP (1) JPS5248481A (en)
CA (1) CA1101550A (en)
DE (1) DE2633197A1 (en)
FR (1) FR2330145A1 (en)
GB (1) GB1558342A (en)
IT (1) IT1074912B (en)
NL (1) NL7608198A (en)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2314260A1 (en) * 1972-05-30 1973-12-13 Ibm CHARGE-COUPLED SEMI-CONDUCTOR ARRANGEMENT AND METHOD OF MANUFACTURING IT
US3927468A (en) * 1973-12-28 1975-12-23 Fairchild Camera Instr Co Self aligned CCD element fabrication method therefor

Also Published As

Publication number Publication date
NL7608198A (en) 1977-01-25
GB1558342A (en) 1979-12-28
JPS5248481A (en) 1977-04-18
FR2330145A1 (en) 1977-05-27
FR2330145B1 (en) 1980-09-12
JPS6141148B2 (en) 1986-09-12
CA1101550A (en) 1981-05-19
DE2633197A1 (en) 1977-02-24

Similar Documents

Publication Publication Date Title
IT1057338B (en) REFINEMENT IN TELEPHONE TYPE SHOWERS
AT348043B (en) PHOTOELECTRIC SEMICONDUCTOR ARRANGEMENT
IT1064150B (en) IMPROVEMENT IN THE DEVICES FOR PERFORMING MASSAGES
IT1047720B (en) IMPROVEMENT IN THE DIAPS
IT1047658B (en) IMPROVEMENT IN LOGICAL CIRCUITS SUITABLE FOR THE CREATION OF INTEGRATED OF THE MOS TYPE
IT1064793B (en) REVERSIBLE TYPE OPTO-ELECTRONIC SEMICONDUCTOR DEVICE
IT1057505B (en) INJECTION-TYPE WRITING MACHINE
IT1041193B (en) IMPROVEMENTS IN PROCEDURES FOR THE MANUFACTURE OF SEMICONDUCTOR DEVICES
IT1060542B (en) IMPROVEMENT IN DRILLS
IT1062186B (en) ROLLER TYPE GRINDER
IT992796B (en) IMPROVEMENT IN THE CIRCUITS FOR USER TELEPHONE DEVICES
HK30479A (en) Improvements in semiconductor protective elements
IT1029929B (en) IMPROVEMENT IN ELECTRICAL CONTACT DEVICES
AR207761A1 (en) IMPROVEMENTS IN FLOOR TOOLS
AR201038A1 (en) IMPROVEMENTS IN FUSE HOLDING DEVICES
IT1056151B (en) IMPROVEMENT IN MOS TYPE SEMICONDUCTOR DEVICES
IT1057369B (en) IMPROVEMENT IN LIGHTING DEVICES
IT952147B (en) IMPROVEMENT IN ELECTRICAL CONNECTORS
IT1079886B (en) IMPROVEMENT IN LIFTING DEVICES FOR CANNONS
IT1074912B (en) IMPROVEMENT IN CCD TYPE SEMICONDUCTOR INTEGRATED DEVICES
IT994442B (en) IMPROVEMENT IN INTEGRATED CIRCUITS
IT1073441B (en) IMPROVEMENT IN OBJECT HANDLING DEVICES
IT1008690B (en) IMPROVEMENT IN PROTECTION DEVICES FOR ELECTRICAL CIRCUITS
IT1058060B (en) IMPROVEMENT IN SEMICONDUCTOR DEVICES
FR1543493A (en) New organosilicon compositions vulcanizable into elastomers

Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19950713