JPS5248066B2 - - Google Patents
Info
- Publication number
- JPS5248066B2 JPS5248066B2 JP2426174A JP2426174A JPS5248066B2 JP S5248066 B2 JPS5248066 B2 JP S5248066B2 JP 2426174 A JP2426174 A JP 2426174A JP 2426174 A JP2426174 A JP 2426174A JP S5248066 B2 JPS5248066 B2 JP S5248066B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/11—Comprising a photonic bandgap structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Led Devices (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2426174A JPS5248066B2 (de) | 1974-03-04 | 1974-03-04 | |
| FR7505097A FR2263624B1 (de) | 1974-03-04 | 1975-02-19 | |
| NL7501990.A NL165891C (nl) | 1974-03-04 | 1975-02-19 | Werkwijze voor de vervaardiging van een halfgeleider- inrichting. |
| GB7109/75A GB1502953A (en) | 1974-03-04 | 1975-02-20 | Semiconductor device and a method of fabricating the same |
| DE2507357A DE2507357C2 (de) | 1974-03-04 | 1975-02-20 | Halbleiterbauelement und Verfahren zu seiner Herstellung |
| US05/627,863 US4121177A (en) | 1973-05-28 | 1975-10-31 | Semiconductor device and a method of fabricating the same |
| US05/895,374 US4213805A (en) | 1973-05-28 | 1978-04-11 | Liquid phase epitaxy method of forming a filimentary laser device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2426174A JPS5248066B2 (de) | 1974-03-04 | 1974-03-04 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS50119584A JPS50119584A (de) | 1975-09-19 |
| JPS5248066B2 true JPS5248066B2 (de) | 1977-12-07 |
Family
ID=12133281
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2426174A Expired JPS5248066B2 (de) | 1973-05-28 | 1974-03-04 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS5248066B2 (de) |
| DE (1) | DE2507357C2 (de) |
| FR (1) | FR2263624B1 (de) |
| GB (1) | GB1502953A (de) |
| NL (1) | NL165891C (de) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS576273B2 (de) * | 1975-03-08 | 1982-02-04 | ||
| JPS531482A (en) * | 1976-06-25 | 1978-01-09 | Mitsubishi Electric Corp | Semiconductor injection type laser |
| NL7609607A (nl) * | 1976-08-30 | 1978-03-02 | Philips Nv | Werkwijze voor het vervaardigen van een half- geleiderinrichting en halfgeleiderinrichting vervaardigd met behulp van de werkwijze. |
| US4169997A (en) * | 1977-05-06 | 1979-10-02 | Bell Telephone Laboratories, Incorporated | Lateral current confinement in junction lasers |
| NL184715C (nl) * | 1978-09-20 | 1989-10-02 | Hitachi Ltd | Halfgeleiderlaserinrichting. |
| FR2502847A1 (fr) * | 1981-03-25 | 1982-10-01 | Western Electric Co | Dispositif emetteur de lumiere a semi-conducteurs comportant une structure de canalisation du courant |
| GB2154059B (en) * | 1984-01-25 | 1987-10-28 | Hitachi Ltd | Light emitting chip and communication apparatus using the same |
| JPS60154689A (ja) * | 1984-01-25 | 1985-08-14 | Hitachi Ltd | 発光素子およびこれを用いた光通信装置 |
| GB2156584B (en) * | 1984-03-16 | 1987-11-04 | Hitachi Ltd | Semiconductor laser chip |
| WO2004073125A1 (ja) * | 2003-02-12 | 2004-08-26 | Sharp Kabushiki Kaisha | 半導体レーザ素子、光学ヘッド、及び情報記録装置 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3359508A (en) * | 1964-02-19 | 1967-12-19 | Gen Electric | High power junction laser structure |
| GB1273284A (en) * | 1970-10-13 | 1972-05-03 | Standard Telephones Cables Ltd | Improvements in or relating to injection lasers |
| DE2137892C3 (de) * | 1971-07-29 | 1978-05-18 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Halbleiterlaser |
| DE2165539C3 (de) * | 1971-12-30 | 1979-12-20 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Doppelhetero-Diodenlaser auf Halb' leiterbasis |
-
1974
- 1974-03-04 JP JP2426174A patent/JPS5248066B2/ja not_active Expired
-
1975
- 1975-02-19 NL NL7501990.A patent/NL165891C/xx not_active IP Right Cessation
- 1975-02-19 FR FR7505097A patent/FR2263624B1/fr not_active Expired
- 1975-02-20 GB GB7109/75A patent/GB1502953A/en not_active Expired
- 1975-02-20 DE DE2507357A patent/DE2507357C2/de not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| NL165891B (nl) | 1980-12-15 |
| GB1502953A (en) | 1978-03-08 |
| DE2507357C2 (de) | 1983-08-11 |
| NL165891C (nl) | 1981-05-15 |
| DE2507357A1 (de) | 1975-09-11 |
| FR2263624A1 (de) | 1975-10-03 |
| FR2263624B1 (de) | 1982-12-17 |
| JPS50119584A (de) | 1975-09-19 |
| NL7501990A (nl) | 1975-09-08 |