JPS5230337A - Regenerative amplifier for charge transfer device - Google Patents

Regenerative amplifier for charge transfer device

Info

Publication number
JPS5230337A
JPS5230337A JP51101046A JP10104676A JPS5230337A JP S5230337 A JPS5230337 A JP S5230337A JP 51101046 A JP51101046 A JP 51101046A JP 10104676 A JP10104676 A JP 10104676A JP S5230337 A JPS5230337 A JP S5230337A
Authority
JP
Japan
Prior art keywords
transfer device
charge transfer
regenerative amplifier
regenerative
amplifier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP51101046A
Other languages
English (en)
Japanese (ja)
Inventor
Hofuman Kuruto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of JPS5230337A publication Critical patent/JPS5230337A/ja
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/24Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using capacitors
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • G11C19/285Peripheral circuits, e.g. for writing into the first stage; for reading-out of the last stage
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K5/00Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/01Shaping pulses
    • H03K5/02Shaping pulses by amplifying
    • H03K5/023Shaping pulses by amplifying using field effect transistors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00Charge transfer devices
    • H10D44/40Charge-coupled devices [CCD]
    • H10D44/45Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/456Structures for regeneration, refreshing or leakage compensation

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Amplifiers (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP51101046A 1975-09-03 1976-08-24 Regenerative amplifier for charge transfer device Pending JPS5230337A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19752539205 DE2539205A1 (de) 1975-09-03 1975-09-03 Regenerierverstaerker fuer ladungsverschiebeanordnungen

Publications (1)

Publication Number Publication Date
JPS5230337A true JPS5230337A (en) 1977-03-08

Family

ID=5955512

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51101046A Pending JPS5230337A (en) 1975-09-03 1976-08-24 Regenerative amplifier for charge transfer device

Country Status (8)

Country Link
US (1) US4082963A (OSRAM)
JP (1) JPS5230337A (OSRAM)
BE (1) BE845852A (OSRAM)
DE (1) DE2539205A1 (OSRAM)
FR (1) FR2323270A1 (OSRAM)
GB (1) GB1563141A (OSRAM)
IT (1) IT1067840B (OSRAM)
NL (1) NL7609579A (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61180331A (ja) * 1985-10-04 1986-08-13 Nec Corp 集積回路装置

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2389899B1 (OSRAM) * 1977-05-06 1981-11-06 Thomson Csf
FR2392392A1 (fr) * 1977-05-27 1978-12-22 Commissariat Energie Atomique Circuit de mesure de charge stockee dans un d.t.c.
US4135104A (en) * 1977-12-02 1979-01-16 Trw, Inc. Regenerator circuit
JPS5544788A (en) * 1978-09-27 1980-03-29 Matsushita Electronics Corp Charge transfer method
DE3072118D1 (en) 1979-12-26 1988-09-22 Toshiba Kk A driver circuit for charge coupled device
JP2519482B2 (ja) * 1987-10-20 1996-07-31 三菱電機株式会社 電荷転送装置
FR2731569B1 (fr) * 1995-03-07 1997-04-25 Thomson Tubes Electroniques Dispositif de recopie de tension a grande linearite

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3623132A (en) * 1970-12-14 1971-11-23 North American Rockwell Charge sensing circuit
GB1435708A (en) * 1972-09-25 1976-05-12 Rca Corp Charge amplifier defibrillators
US3876989A (en) * 1973-06-18 1975-04-08 Ibm Ccd optical sensor storage device having continuous light exposure compensation
US3947698A (en) * 1973-09-17 1976-03-30 Texas Instruments Incorporated Charge coupled device multiplexer
US3986059A (en) * 1975-04-18 1976-10-12 Bell Telephone Laboratories, Incorporated Electrically pulsed charge regenerator for semiconductor charge coupled devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61180331A (ja) * 1985-10-04 1986-08-13 Nec Corp 集積回路装置

Also Published As

Publication number Publication date
US4082963A (en) 1978-04-04
GB1563141A (en) 1980-03-19
DE2539205A1 (de) 1977-03-17
FR2323270B1 (OSRAM) 1978-11-03
FR2323270A1 (fr) 1977-04-01
IT1067840B (it) 1985-03-21
NL7609579A (nl) 1977-03-07
BE845852A (fr) 1976-12-31

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