JPS5236479A - Charge coupled charge transfer device - Google Patents
Charge coupled charge transfer deviceInfo
- Publication number
- JPS5236479A JPS5236479A JP51111262A JP11126276A JPS5236479A JP S5236479 A JPS5236479 A JP S5236479A JP 51111262 A JP51111262 A JP 51111262A JP 11126276 A JP11126276 A JP 11126276A JP S5236479 A JPS5236479 A JP S5236479A
- Authority
- JP
- Japan
- Prior art keywords
- charge
- transfer device
- coupled
- charge transfer
- charge coupled
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76866—Surface Channel CCD
- H01L29/76875—Two-Phase CCD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/107—Substrate region of field-effect devices
- H01L29/1091—Substrate region of field-effect devices of charge coupled devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42396—Gate electrodes for field effect devices for charge coupled devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76866—Surface Channel CCD
- H01L29/76883—Three-Phase CCD
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19752541236 DE2541236A1 (en) | 1975-09-16 | 1975-09-16 | CARGO-COUPLED LOAD SHIFTING DEVICE |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5236479A true JPS5236479A (en) | 1977-03-19 |
Family
ID=5956589
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP51111262A Pending JPS5236479A (en) | 1975-09-16 | 1976-09-16 | Charge coupled charge transfer device |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPS5236479A (en) |
BE (1) | BE846284A (en) |
DE (1) | DE2541236A1 (en) |
FR (1) | FR2325197A1 (en) |
IT (1) | IT1068136B (en) |
NL (1) | NL7609680A (en) |
-
1975
- 1975-09-16 DE DE19752541236 patent/DE2541236A1/en active Pending
-
1976
- 1976-08-31 NL NL7609680A patent/NL7609680A/en not_active Application Discontinuation
- 1976-08-31 FR FR7626219A patent/FR2325197A1/en not_active Withdrawn
- 1976-09-10 IT IT2706776A patent/IT1068136B/en active
- 1976-09-16 BE BE170694A patent/BE846284A/en unknown
- 1976-09-16 JP JP51111262A patent/JPS5236479A/en active Pending
Also Published As
Publication number | Publication date |
---|---|
IT1068136B (en) | 1985-03-21 |
NL7609680A (en) | 1977-03-18 |
FR2325197A1 (en) | 1977-04-15 |
BE846284A (en) | 1977-01-17 |
DE2541236A1 (en) | 1977-03-24 |
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