JPS5230175A - Lateral type transistor - Google Patents
Lateral type transistorInfo
- Publication number
- JPS5230175A JPS5230175A JP10626275A JP10626275A JPS5230175A JP S5230175 A JPS5230175 A JP S5230175A JP 10626275 A JP10626275 A JP 10626275A JP 10626275 A JP10626275 A JP 10626275A JP S5230175 A JPS5230175 A JP S5230175A
- Authority
- JP
- Japan
- Prior art keywords
- type transistor
- lateral type
- lateral
- disimprovement
- energized
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
Abstract
PURPOSE: To obtain a lateral-type transistor which is applied to a semiconductor integrated circuit without current amplitude disimprovement even if strong current is energized.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10626275A JPS5230175A (en) | 1975-09-01 | 1975-09-01 | Lateral type transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10626275A JPS5230175A (en) | 1975-09-01 | 1975-09-01 | Lateral type transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5230175A true JPS5230175A (en) | 1977-03-07 |
Family
ID=14429171
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10626275A Pending JPS5230175A (en) | 1975-09-01 | 1975-09-01 | Lateral type transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5230175A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6372596B1 (en) * | 1985-01-30 | 2002-04-16 | Texas Instruments Incorporated | Method of making horizontal bipolar transistor with insulated base structure |
-
1975
- 1975-09-01 JP JP10626275A patent/JPS5230175A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6372596B1 (en) * | 1985-01-30 | 2002-04-16 | Texas Instruments Incorporated | Method of making horizontal bipolar transistor with insulated base structure |
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