JPS5227284A - Thyristor - Google Patents

Thyristor

Info

Publication number
JPS5227284A
JPS5227284A JP10215376A JP10215376A JPS5227284A JP S5227284 A JPS5227284 A JP S5227284A JP 10215376 A JP10215376 A JP 10215376A JP 10215376 A JP10215376 A JP 10215376A JP S5227284 A JPS5227284 A JP S5227284A
Authority
JP
Japan
Prior art keywords
thyristor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10215376A
Other languages
Japanese (ja)
Other versions
JPS5649458B2 (en
Inventor
Buratsutsueeda Kaaru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of JPS5227284A publication Critical patent/JPS5227284A/en
Publication of JPS5649458B2 publication Critical patent/JPS5649458B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
JP10215376A 1975-08-26 1976-08-26 Thyristor Granted JPS5227284A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19752537984 DE2537984C3 (en) 1975-08-26 1975-08-26 Thyristor

Publications (2)

Publication Number Publication Date
JPS5227284A true JPS5227284A (en) 1977-03-01
JPS5649458B2 JPS5649458B2 (en) 1981-11-21

Family

ID=5954887

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10215376A Granted JPS5227284A (en) 1975-08-26 1976-08-26 Thyristor

Country Status (2)

Country Link
JP (1) JPS5227284A (en)
DE (1) DE2537984C3 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS549585A (en) * 1977-06-24 1979-01-24 Hitachi Ltd High-dielectric-strength semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3361943A (en) * 1961-07-12 1968-01-02 Gen Electric Co Ltd Semiconductor junction devices which include semiconductor wafers having bevelled edges

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE352779B (en) * 1967-12-28 1973-01-08 Asea Ab

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3361943A (en) * 1961-07-12 1968-01-02 Gen Electric Co Ltd Semiconductor junction devices which include semiconductor wafers having bevelled edges

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS549585A (en) * 1977-06-24 1979-01-24 Hitachi Ltd High-dielectric-strength semiconductor device

Also Published As

Publication number Publication date
JPS5649458B2 (en) 1981-11-21
DE2537984B2 (en) 1980-11-20
DE2537984A1 (en) 1977-03-10
DE2537984C3 (en) 1981-07-16

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