JPS5225294B2 - - Google Patents

Info

Publication number
JPS5225294B2
JPS5225294B2 JP48017023A JP1702373A JPS5225294B2 JP S5225294 B2 JPS5225294 B2 JP S5225294B2 JP 48017023 A JP48017023 A JP 48017023A JP 1702373 A JP1702373 A JP 1702373A JP S5225294 B2 JPS5225294 B2 JP S5225294B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP48017023A
Other versions
JPS4890190A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4890190A publication Critical patent/JPS4890190A/ja
Publication of JPS5225294B2 publication Critical patent/JPS5225294B2/ja
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/10—Controlling or regulating
    • C30B19/106—Controlling or regulating adding crystallising material or reactants forming it in situ to the liquid
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/063—Sliding boat system
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S252/00—Compositions
    • Y10S252/95—Doping agent source material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP48017023A 1972-02-09 1973-02-09 Expired JPS5225294B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US224758A US3897281A (en) 1972-02-09 1972-02-09 Method for epitaxially growing a semiconductor material on a substrate from the liquid phase

Publications (2)

Publication Number Publication Date
JPS4890190A JPS4890190A (ja) 1973-11-24
JPS5225294B2 true JPS5225294B2 (ja) 1977-07-06

Family

ID=22842062

Family Applications (1)

Application Number Title Priority Date Filing Date
JP48017023A Expired JPS5225294B2 (ja) 1972-02-09 1973-02-09

Country Status (8)

Country Link
US (1) US3897281A (ja)
JP (1) JPS5225294B2 (ja)
BE (1) BE795005A (ja)
CA (1) CA986393A (ja)
DE (1) DE2305019C3 (ja)
FR (1) FR2171129B1 (ja)
GB (1) GB1414254A (ja)
IT (1) IT978597B (ja)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5318151B2 (ja) * 1971-12-14 1978-06-13
JPS5346594B2 (ja) * 1974-02-18 1978-12-14
JPS5125075A (en) * 1974-08-27 1976-03-01 Sharp Kk Handotaisochi no seizosochi oyobi seizohoho
JPS5144478A (ja) * 1974-10-14 1976-04-16 Mitsubishi Electric Corp
JPS51107766A (en) * 1975-03-19 1976-09-24 Fujitsu Ltd Ekisoseichoho oyobi sochi
US4052252A (en) * 1975-04-04 1977-10-04 Rca Corporation Liquid phase epitaxial growth with interfacial temperature difference
DE2621145C3 (de) * 1976-05-13 1978-11-02 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V., 8000 Muenchen Verfahren zur Herstellung von Siliciumschichten
JPS52141171A (en) * 1976-05-20 1977-11-25 Stanley Electric Co Ltd Method of making semiconductor
JPS52155187A (en) * 1976-06-18 1977-12-23 Mitsubishi Electric Corp Liquid phase growth of semiconductor crystal
JPS52155186A (en) * 1976-06-18 1977-12-23 Mitsubishi Electric Corp Liquid phase growth of iii-v group semiconductor
CA1140032A (en) * 1978-03-07 1983-01-25 Marc M. Faktor Growth of semiconductor compounds
DE2847091C3 (de) * 1978-10-28 1982-03-25 Siemens AG, 1000 Berlin und 8000 München Verfahren und Vorrichtung zur Herstellung von Ga↓1↓-↓x↓Al↓x↓ AS:Si-Epitaxieschichten
FR2519032A1 (fr) * 1981-12-28 1983-07-01 Benchimol Jean Louis Procede de depot par epitaxie en phase liquide d'un compose ternaire
JPS60161397A (ja) * 1984-01-27 1985-08-23 Mitsubishi Monsanto Chem Co 液相エピタキシヤル成長方法
US5326719A (en) * 1988-03-11 1994-07-05 Unisearch Limited Thin film growth using two part metal solvent
US5264190A (en) * 1990-04-19 1993-11-23 Mitsubishi Denki Kabushiki Kaisha Liquid phase epitaxial film growth apparatus
US5314571A (en) * 1992-05-13 1994-05-24 Midwest Research Institute Crystallization from high temperature solutions of Si in copper
DE4310612C1 (de) * 1993-03-31 1994-11-10 Max Planck Gesellschaft Flüssigphasen-Heteroepitaxieverfahren
EP1739213B1 (de) * 2005-07-01 2011-04-13 Freiberger Compound Materials GmbH Vorrichtung und Verfahren zum Tempern von III-V-Wafern sowie getemperte III-V-Halbleitereinkristallwafer

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1248999A (en) * 1968-09-27 1971-10-06 Matsushita Electric Ind Co Ltd Apparatus for epitaxial growth from the liquid state
US3565702A (en) * 1969-02-14 1971-02-23 Rca Corp Depositing successive epitaxial semiconductive layers from the liquid phase
BE754519A (fr) * 1969-08-06 1971-02-08 Motorola Inc Procede et appareil pour la croissance de couches epitaxiales en phase liquide sur des semi-conducteurs
US3677836A (en) * 1969-09-23 1972-07-18 Ibm Liquid epitaxy method of fabricating controlled band gap gaal as electroluminescent devices
US3696262A (en) * 1970-01-19 1972-10-03 Varian Associates Multilayered iii-v photocathode having a transition layer and a high quality active layer
US3741825A (en) * 1971-07-08 1973-06-26 Rca Corp Method of depositing an epitaxial semiconductor layer from the liquidphase
BE788374A (fr) * 1971-12-08 1973-01-02 Rca Corp Procede de depot d'une couche epitaxiale d'un materiau semi-conducteur sur la surface d'un substrat

Also Published As

Publication number Publication date
FR2171129B1 (ja) 1976-04-30
GB1414254A (en) 1975-11-19
DE2305019A1 (de) 1973-08-23
FR2171129A1 (ja) 1973-09-21
DE2305019B2 (de) 1978-10-19
US3897281A (en) 1975-07-29
JPS4890190A (ja) 1973-11-24
CA986393A (en) 1976-03-30
DE2305019C3 (de) 1983-02-17
IT978597B (it) 1974-09-20
BE795005A (fr) 1973-05-29

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