JPS522287A - Semiconductor switching element - Google Patents

Semiconductor switching element

Info

Publication number
JPS522287A
JPS522287A JP50077663A JP7766375A JPS522287A JP S522287 A JPS522287 A JP S522287A JP 50077663 A JP50077663 A JP 50077663A JP 7766375 A JP7766375 A JP 7766375A JP S522287 A JPS522287 A JP S522287A
Authority
JP
Japan
Prior art keywords
semiconductor switching
switching element
switching device
electrode current
power semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50077663A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6118347B2 (enrdf_load_stackoverflow
Inventor
Masahiko Akamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP50077663A priority Critical patent/JPS522287A/ja
Publication of JPS522287A publication Critical patent/JPS522287A/ja
Publication of JPS6118347B2 publication Critical patent/JPS6118347B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Thyristors (AREA)
JP50077663A 1975-06-24 1975-06-24 Semiconductor switching element Granted JPS522287A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50077663A JPS522287A (en) 1975-06-24 1975-06-24 Semiconductor switching element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50077663A JPS522287A (en) 1975-06-24 1975-06-24 Semiconductor switching element

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP1745780A Division JPS55146968A (en) 1980-02-14 1980-02-14 Semiconductor switching element

Publications (2)

Publication Number Publication Date
JPS522287A true JPS522287A (en) 1977-01-08
JPS6118347B2 JPS6118347B2 (enrdf_load_stackoverflow) 1986-05-12

Family

ID=13640104

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50077663A Granted JPS522287A (en) 1975-06-24 1975-06-24 Semiconductor switching element

Country Status (1)

Country Link
JP (1) JPS522287A (enrdf_load_stackoverflow)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4356503A (en) * 1978-06-14 1982-10-26 General Electric Company Latching transistor
JPS5830920U (ja) * 1981-08-21 1983-02-28 三洋電機株式会社 静止画記録再生装置
US4450467A (en) * 1978-09-14 1984-05-22 Hitachi, Ltd. Gate turn-off thyristor with selective anode penetrating shorts
JPS60247801A (ja) * 1984-05-23 1985-12-07 Canon Inc 再生装置
US4782379A (en) * 1981-11-23 1988-11-01 General Electric Company Semiconductor device having rapid removal of majority carriers from an active base region thereof at device turn-off and method of fabricating this device
US4786959A (en) * 1979-07-06 1988-11-22 Hitachi, Ltd. Gate turn-off thyristor
US5093705A (en) * 1985-06-28 1992-03-03 Siemens Aktiengesellschaft Thyristor with reduced central zone thickness

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4356503A (en) * 1978-06-14 1982-10-26 General Electric Company Latching transistor
US4450467A (en) * 1978-09-14 1984-05-22 Hitachi, Ltd. Gate turn-off thyristor with selective anode penetrating shorts
US4786959A (en) * 1979-07-06 1988-11-22 Hitachi, Ltd. Gate turn-off thyristor
JPS5830920U (ja) * 1981-08-21 1983-02-28 三洋電機株式会社 静止画記録再生装置
US4782379A (en) * 1981-11-23 1988-11-01 General Electric Company Semiconductor device having rapid removal of majority carriers from an active base region thereof at device turn-off and method of fabricating this device
JPS60247801A (ja) * 1984-05-23 1985-12-07 Canon Inc 再生装置
US5093705A (en) * 1985-06-28 1992-03-03 Siemens Aktiengesellschaft Thyristor with reduced central zone thickness

Also Published As

Publication number Publication date
JPS6118347B2 (enrdf_load_stackoverflow) 1986-05-12

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