JPS521877B2 - - Google Patents

Info

Publication number
JPS521877B2
JPS521877B2 JP9600772A JP9600772A JPS521877B2 JP S521877 B2 JPS521877 B2 JP S521877B2 JP 9600772 A JP9600772 A JP 9600772A JP 9600772 A JP9600772 A JP 9600772A JP S521877 B2 JPS521877 B2 JP S521877B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP9600772A
Other languages
Japanese (ja)
Other versions
JPS4953386A (US06811534-20041102-M00003.png
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP9600772A priority Critical patent/JPS521877B2/ja
Priority to GB4475173A priority patent/GB1429696A/en
Priority to CA181,779A priority patent/CA1004780A/en
Priority to IT5272573A priority patent/IT994322B/it
Priority to DE19732348262 priority patent/DE2348262A1/de
Priority to FR7334414A priority patent/FR2200636B1/fr
Priority to NL7313221A priority patent/NL184814C/xx
Publication of JPS4953386A publication Critical patent/JPS4953386A/ja
Publication of JPS521877B2 publication Critical patent/JPS521877B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0805Capacitors only
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0641Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
    • H01L27/0647Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
    • H01L27/0652Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0658Vertical bipolar transistor in combination with resistors or capacitors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
  • Bipolar Integrated Circuits (AREA)
JP9600772A 1972-09-25 1972-09-25 Expired JPS521877B2 (US06811534-20041102-M00003.png)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP9600772A JPS521877B2 (US06811534-20041102-M00003.png) 1972-09-25 1972-09-25
GB4475173A GB1429696A (US06811534-20041102-M00003.png) 1972-09-25 1973-09-24
CA181,779A CA1004780A (en) 1972-09-25 1973-09-24 Semiconductor integrated circuit mis structure
IT5272573A IT994322B (it) 1972-09-25 1973-09-25 Circuito integrato a semiconduttore
DE19732348262 DE2348262A1 (de) 1972-09-25 1973-09-25 Integrierte halbleiterschaltung
FR7334414A FR2200636B1 (US06811534-20041102-M00003.png) 1972-09-25 1973-09-25
NL7313221A NL184814C (nl) 1972-09-25 1973-09-25 Geintegreerde halfgeleiderschakeling.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9600772A JPS521877B2 (US06811534-20041102-M00003.png) 1972-09-25 1972-09-25

Publications (2)

Publication Number Publication Date
JPS4953386A JPS4953386A (US06811534-20041102-M00003.png) 1974-05-23
JPS521877B2 true JPS521877B2 (US06811534-20041102-M00003.png) 1977-01-18

Family

ID=14153103

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9600772A Expired JPS521877B2 (US06811534-20041102-M00003.png) 1972-09-25 1972-09-25

Country Status (7)

Country Link
JP (1) JPS521877B2 (US06811534-20041102-M00003.png)
CA (1) CA1004780A (US06811534-20041102-M00003.png)
DE (1) DE2348262A1 (US06811534-20041102-M00003.png)
FR (1) FR2200636B1 (US06811534-20041102-M00003.png)
GB (1) GB1429696A (US06811534-20041102-M00003.png)
IT (1) IT994322B (US06811534-20041102-M00003.png)
NL (1) NL184814C (US06811534-20041102-M00003.png)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010163398A (ja) * 2009-01-16 2010-07-29 Hisamitsu Pharmaceut Co Inc シート状貼付剤

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5994450A (ja) * 1982-11-19 1984-05-31 Nec Kyushu Ltd 半導体装置の製造方法
US5177587A (en) * 1989-07-21 1993-01-05 Linear Technology Corporation Push-back junction isolation semiconductor structure and method
JP5974978B2 (ja) 2013-05-29 2016-08-23 信越半導体株式会社 シリコン単結晶製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1539873B2 (de) * 1966-10-18 1971-03-11 Deutsche Itt Industries Gmbh, 7800 Freiburg Transistor
US3544863A (en) * 1968-10-29 1970-12-01 Motorola Inc Monolithic integrated circuit substructure with epitaxial decoupling capacitance
FR2036530A5 (US06811534-20041102-M00003.png) * 1969-03-24 1970-12-24 Radiotechnique Compelec

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010163398A (ja) * 2009-01-16 2010-07-29 Hisamitsu Pharmaceut Co Inc シート状貼付剤

Also Published As

Publication number Publication date
FR2200636A1 (US06811534-20041102-M00003.png) 1974-04-19
CA1004780A (en) 1977-02-01
IT994322B (it) 1975-10-20
NL184814C (nl) 1989-11-01
JPS4953386A (US06811534-20041102-M00003.png) 1974-05-23
DE2348262A1 (de) 1974-04-18
NL7313221A (US06811534-20041102-M00003.png) 1974-03-27
GB1429696A (US06811534-20041102-M00003.png) 1976-03-24
FR2200636B1 (US06811534-20041102-M00003.png) 1978-06-30
NL184814B (nl) 1989-06-01

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