JPS5215485A - Process for growth of ribbon crystals by lateral pulling - Google Patents

Process for growth of ribbon crystals by lateral pulling

Info

Publication number
JPS5215485A
JPS5215485A JP9109975A JP9109975A JPS5215485A JP S5215485 A JPS5215485 A JP S5215485A JP 9109975 A JP9109975 A JP 9109975A JP 9109975 A JP9109975 A JP 9109975A JP S5215485 A JPS5215485 A JP S5215485A
Authority
JP
Japan
Prior art keywords
growth
lateral pulling
ribbon crystals
ribbon
crystals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9109975A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5722917B2 (Direct
Inventor
Hiroshi Kudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Materials Silicon Corp
Original Assignee
Toyo Silicon Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyo Silicon Co Ltd filed Critical Toyo Silicon Co Ltd
Priority to JP9109975A priority Critical patent/JPS5215485A/ja
Priority to DE2633961A priority patent/DE2633961C2/de
Publication of JPS5215485A publication Critical patent/JPS5215485A/ja
Priority to US05/863,480 priority patent/US4329195A/en
Publication of JPS5722917B2 publication Critical patent/JPS5722917B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP9109975A 1975-07-28 1975-07-28 Process for growth of ribbon crystals by lateral pulling Granted JPS5215485A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP9109975A JPS5215485A (en) 1975-07-28 1975-07-28 Process for growth of ribbon crystals by lateral pulling
DE2633961A DE2633961C2 (de) 1975-07-28 1976-07-28 Verfahren zum Ziehen eines dünnen Halbleiter-Einkristallbandes
US05/863,480 US4329195A (en) 1975-07-28 1977-12-22 Lateral pulling growth of crystal ribbons

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9109975A JPS5215485A (en) 1975-07-28 1975-07-28 Process for growth of ribbon crystals by lateral pulling

Publications (2)

Publication Number Publication Date
JPS5215485A true JPS5215485A (en) 1977-02-05
JPS5722917B2 JPS5722917B2 (Direct) 1982-05-15

Family

ID=14017061

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9109975A Granted JPS5215485A (en) 1975-07-28 1975-07-28 Process for growth of ribbon crystals by lateral pulling

Country Status (1)

Country Link
JP (1) JPS5215485A (Direct)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013530911A (ja) * 2010-05-06 2013-08-01 ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド ガスジェットを用いる融液の表面からのシートの取り出し
JP2013531876A (ja) * 2010-05-06 2013-08-08 ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド 弾性及び浮力を用いる融液の表面からのシートの取り出し
JP2014534158A (ja) * 2011-11-09 2014-12-18 バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド シリコン結晶基板を成長するための装置および方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013530911A (ja) * 2010-05-06 2013-08-01 ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド ガスジェットを用いる融液の表面からのシートの取り出し
JP2013531876A (ja) * 2010-05-06 2013-08-08 ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド 弾性及び浮力を用いる融液の表面からのシートの取り出し
JP2014534158A (ja) * 2011-11-09 2014-12-18 バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド シリコン結晶基板を成長するための装置および方法

Also Published As

Publication number Publication date
JPS5722917B2 (Direct) 1982-05-15

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