JPS5212552B2 - - Google Patents
Info
- Publication number
- JPS5212552B2 JPS5212552B2 JP49110952A JP11095274A JPS5212552B2 JP S5212552 B2 JPS5212552 B2 JP S5212552B2 JP 49110952 A JP49110952 A JP 49110952A JP 11095274 A JP11095274 A JP 11095274A JP S5212552 B2 JPS5212552 B2 JP S5212552B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
- H03K17/615—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors in a Darlington configuration
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
- H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/641—Combinations of only vertical BJTs
- H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors
-
- H10W20/40—
Landscapes
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US00400974A US3836996A (en) | 1973-09-26 | 1973-09-26 | Semiconductor darlington circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5079283A JPS5079283A (ja) | 1975-06-27 |
| JPS5212552B2 true JPS5212552B2 (ja) | 1977-04-07 |
Family
ID=23585744
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP49110952A Expired JPS5212552B2 (ja) | 1973-09-26 | 1974-09-25 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US3836996A (ja) |
| JP (1) | JPS5212552B2 (ja) |
| BE (1) | BE820350A (ja) |
| CA (1) | CA1018673A (ja) |
| DE (1) | DE2444589A1 (ja) |
| FR (1) | FR2245086B1 (ja) |
| GB (1) | GB1450749A (ja) |
| IT (1) | IT1021167B (ja) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2297495A1 (fr) * | 1975-01-10 | 1976-08-06 | Radiotechnique Compelec | Structure de transistors complementaires et son procede de fabrication |
| US4136355A (en) * | 1976-02-10 | 1979-01-23 | Matsushita Electronics Corporation | Darlington transistor |
| US4035828A (en) * | 1976-05-21 | 1977-07-12 | Rca Corporation | Semiconductor integrated circuit device |
| US4936928A (en) * | 1985-11-27 | 1990-06-26 | Raytheon Company | Semiconductor device |
| GB2183907B (en) * | 1985-11-27 | 1989-10-04 | Raytheon Co | Semiconductor device |
| DE3788500T2 (de) * | 1986-10-31 | 1994-04-28 | Nippon Denso Co | Bipolarer Halbleitertransistor. |
| US5541439A (en) * | 1994-11-17 | 1996-07-30 | Xerox Corporation | Layout for a high voltage darlington pair |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3624454A (en) * | 1969-09-15 | 1971-11-30 | Gen Motors Corp | Mesa-type semiconductor device |
-
1973
- 1973-09-26 US US00400974A patent/US3836996A/en not_active Expired - Lifetime
-
1974
- 1974-09-06 IT IT27047/74A patent/IT1021167B/it active
- 1974-09-12 CA CA209,091A patent/CA1018673A/en not_active Expired
- 1974-09-16 FR FR7431268A patent/FR2245086B1/fr not_active Expired
- 1974-09-18 DE DE19742444589 patent/DE2444589A1/de active Pending
- 1974-09-20 GB GB4115274A patent/GB1450749A/en not_active Expired
- 1974-09-25 JP JP49110952A patent/JPS5212552B2/ja not_active Expired
- 1974-09-25 BE BE148904A patent/BE820350A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| GB1450749A (en) | 1976-09-29 |
| CA1018673A (en) | 1977-10-04 |
| BE820350A (fr) | 1975-01-16 |
| IT1021167B (it) | 1978-01-30 |
| US3836996A (en) | 1974-09-17 |
| JPS5079283A (ja) | 1975-06-27 |
| FR2245086B1 (ja) | 1978-11-24 |
| DE2444589A1 (de) | 1975-03-27 |
| FR2245086A1 (ja) | 1975-04-18 |