JPS52117299A - Semi-insulating single crystal of the group iii-v compounds - Google Patents

Semi-insulating single crystal of the group iii-v compounds

Info

Publication number
JPS52117299A
JPS52117299A JP3481176A JP3481176A JPS52117299A JP S52117299 A JPS52117299 A JP S52117299A JP 3481176 A JP3481176 A JP 3481176A JP 3481176 A JP3481176 A JP 3481176A JP S52117299 A JPS52117299 A JP S52117299A
Authority
JP
Japan
Prior art keywords
semi
compounds
single crystal
group iii
insulating single
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3481176A
Other languages
Japanese (ja)
Other versions
JPS5946918B2 (en
Inventor
Shinichi Akai
Yasuhiro Nishida
Keiichiro Fujita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP3481176A priority Critical patent/JPS5946918B2/en
Priority to US05/780,186 priority patent/US4158851A/en
Priority to GB12929/77A priority patent/GB1540211A/en
Publication of JPS52117299A publication Critical patent/JPS52117299A/en
Publication of JPS5946918B2 publication Critical patent/JPS5946918B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To obtain a semi-insulating single crystal of the group III-V compounds which is stable during processing by controlling the doping conditions of various impurities so as to improve the yield of the production of elements.
COPYRIGHT: (C)1977,JPO&Japio
JP3481176A 1976-03-29 1976-03-29 Semi-insulating gallium arsenide single crystal Expired JPS5946918B2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP3481176A JPS5946918B2 (en) 1976-03-29 1976-03-29 Semi-insulating gallium arsenide single crystal
US05/780,186 US4158851A (en) 1976-03-29 1977-03-22 Semi-insulating gallium arsenide single crystal
GB12929/77A GB1540211A (en) 1976-03-29 1977-03-28 High resistivity gallium arsenide single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3481176A JPS5946918B2 (en) 1976-03-29 1976-03-29 Semi-insulating gallium arsenide single crystal

Publications (2)

Publication Number Publication Date
JPS52117299A true JPS52117299A (en) 1977-10-01
JPS5946918B2 JPS5946918B2 (en) 1984-11-15

Family

ID=12424586

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3481176A Expired JPS5946918B2 (en) 1976-03-29 1976-03-29 Semi-insulating gallium arsenide single crystal

Country Status (1)

Country Link
JP (1) JPS5946918B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0252821U (en) * 1988-10-12 1990-04-17

Also Published As

Publication number Publication date
JPS5946918B2 (en) 1984-11-15

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