JPS52112293A - Semiconductor laser unit - Google Patents

Semiconductor laser unit

Info

Publication number
JPS52112293A
JPS52112293A JP2948876A JP2948876A JPS52112293A JP S52112293 A JPS52112293 A JP S52112293A JP 2948876 A JP2948876 A JP 2948876A JP 2948876 A JP2948876 A JP 2948876A JP S52112293 A JPS52112293 A JP S52112293A
Authority
JP
Japan
Prior art keywords
laser unit
semiconductor laser
signal current
stripe electrode
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2948876A
Other languages
Japanese (ja)
Other versions
JPS5744039B2 (en
Inventor
Kunio Ito
Morio Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP2948876A priority Critical patent/JPS52112293A/en
Publication of JPS52112293A publication Critical patent/JPS52112293A/en
Publication of JPS5744039B2 publication Critical patent/JPS5744039B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To realize a structure in which if signal current is applied to a stripe electrode the oscillation light is produced simultaneously under other electrodes near the stripe electrode in accordance with the signal current. Thus, a laser unit, which can suitably used for the coupler of light IC, etc., can be obtained.
JP2948876A 1976-03-17 1976-03-17 Semiconductor laser unit Granted JPS52112293A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2948876A JPS52112293A (en) 1976-03-17 1976-03-17 Semiconductor laser unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2948876A JPS52112293A (en) 1976-03-17 1976-03-17 Semiconductor laser unit

Publications (2)

Publication Number Publication Date
JPS52112293A true JPS52112293A (en) 1977-09-20
JPS5744039B2 JPS5744039B2 (en) 1982-09-18

Family

ID=12277449

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2948876A Granted JPS52112293A (en) 1976-03-17 1976-03-17 Semiconductor laser unit

Country Status (1)

Country Link
JP (1) JPS52112293A (en)

Also Published As

Publication number Publication date
JPS5744039B2 (en) 1982-09-18

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