JPS52101499A - Singleecrystal magnetic semiconductor of yttrium diferrous tetraoxigen compoun *yfe204* and method of manufacture thereof - Google Patents
Singleecrystal magnetic semiconductor of yttrium diferrous tetraoxigen compoun *yfe204* and method of manufacture thereofInfo
- Publication number
- JPS52101499A JPS52101499A JP1834576A JP1834576A JPS52101499A JP S52101499 A JPS52101499 A JP S52101499A JP 1834576 A JP1834576 A JP 1834576A JP 1834576 A JP1834576 A JP 1834576A JP S52101499 A JPS52101499 A JP S52101499A
- Authority
- JP
- Japan
- Prior art keywords
- yfe204
- tetraoxigen
- singleecrystal
- diferrous
- compoun
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 229910052727 yttrium Inorganic materials 0.000 title 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 title 1
Landscapes
- Hard Magnetic Materials (AREA)
- Conductive Materials (AREA)
- Compounds Of Iron (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1834576A JPS52101499A (en) | 1976-02-21 | 1976-02-21 | Singleecrystal magnetic semiconductor of yttrium diferrous tetraoxigen compoun *yfe204* and method of manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1834576A JPS52101499A (en) | 1976-02-21 | 1976-02-21 | Singleecrystal magnetic semiconductor of yttrium diferrous tetraoxigen compoun *yfe204* and method of manufacture thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS52101499A true JPS52101499A (en) | 1977-08-25 |
| JPS5524683B2 JPS5524683B2 (enExample) | 1980-07-01 |
Family
ID=11969059
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1834576A Granted JPS52101499A (en) | 1976-02-21 | 1976-02-21 | Singleecrystal magnetic semiconductor of yttrium diferrous tetraoxigen compoun *yfe204* and method of manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS52101499A (enExample) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54159382A (en) * | 1978-06-08 | 1979-12-17 | Seiko Epson Corp | Synthetic method for transparent single crystal |
| JP2010053006A (ja) * | 2008-08-29 | 2010-03-11 | Okayama Univ | 酸化物及び電気導体の電気物性制御方法 |
| WO2010064686A1 (ja) * | 2008-12-03 | 2010-06-10 | 国立大学法人岡山大学 | 誘電体化合物及びその製造方法 |
| JP2010202439A (ja) * | 2009-03-02 | 2010-09-16 | Okayama Univ | 電気磁気効果材料及び電気磁気効果材料からなる電子素子 |
-
1976
- 1976-02-21 JP JP1834576A patent/JPS52101499A/ja active Granted
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54159382A (en) * | 1978-06-08 | 1979-12-17 | Seiko Epson Corp | Synthetic method for transparent single crystal |
| JP2010053006A (ja) * | 2008-08-29 | 2010-03-11 | Okayama Univ | 酸化物及び電気導体の電気物性制御方法 |
| WO2010064686A1 (ja) * | 2008-12-03 | 2010-06-10 | 国立大学法人岡山大学 | 誘電体化合物及びその製造方法 |
| JP5688733B2 (ja) * | 2008-12-03 | 2015-03-25 | 国立大学法人 岡山大学 | 誘電体化合物の製造方法 |
| JP2010202439A (ja) * | 2009-03-02 | 2010-09-16 | Okayama Univ | 電気磁気効果材料及び電気磁気効果材料からなる電子素子 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5524683B2 (enExample) | 1980-07-01 |
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