JPS5193683A - - Google Patents

Info

Publication number
JPS5193683A
JPS5193683A JP51001342A JP134276A JPS5193683A JP S5193683 A JPS5193683 A JP S5193683A JP 51001342 A JP51001342 A JP 51001342A JP 134276 A JP134276 A JP 134276A JP S5193683 A JPS5193683 A JP S5193683A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP51001342A
Other languages
Japanese (ja)
Other versions
JPS561782B2 (US06633782-20031014-M00005.png
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5193683A publication Critical patent/JPS5193683A/ja
Publication of JPS561782B2 publication Critical patent/JPS561782B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0826Combination of vertical complementary transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
JP134276A 1975-01-10 1976-01-07 Expired JPS561782B2 (US06633782-20031014-M00005.png)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7500713A FR2297495A1 (fr) 1975-01-10 1975-01-10 Structure de transistors complementaires et son procede de fabrication

Publications (2)

Publication Number Publication Date
JPS5193683A true JPS5193683A (US06633782-20031014-M00005.png) 1976-08-17
JPS561782B2 JPS561782B2 (US06633782-20031014-M00005.png) 1981-01-16

Family

ID=9149625

Family Applications (1)

Application Number Title Priority Date Filing Date
JP134276A Expired JPS561782B2 (US06633782-20031014-M00005.png) 1975-01-10 1976-01-07

Country Status (8)

Country Link
US (1) US4058825A (US06633782-20031014-M00005.png)
JP (1) JPS561782B2 (US06633782-20031014-M00005.png)
CA (1) CA1046167A (US06633782-20031014-M00005.png)
DE (1) DE2600375C3 (US06633782-20031014-M00005.png)
FR (1) FR2297495A1 (US06633782-20031014-M00005.png)
GB (1) GB1531811A (US06633782-20031014-M00005.png)
IT (1) IT1054024B (US06633782-20031014-M00005.png)
NL (1) NL7600062A (US06633782-20031014-M00005.png)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2408914A1 (fr) * 1977-11-14 1979-06-08 Radiotechnique Compelec Dispositif semi-conducteur monolithique comprenant deux transistors complementaires et son procede de fabrication
GB2123207A (en) * 1982-06-30 1984-01-25 Westinghouse Electric Corp Glass passivated high power semiconductor devices
JPS62250661A (ja) * 1986-04-23 1987-10-31 Fuji Electric Co Ltd 半導体装置
GB2277197B (en) * 1993-04-13 1997-08-27 Motorola Inc Voltage protection arrangement
US9478537B2 (en) * 2009-07-15 2016-10-25 Cree, Inc. High-gain wide bandgap darlington transistors and related methods of fabrication
US9761608B1 (en) * 2016-08-15 2017-09-12 International Business Machines Corporation Lateral bipolar junction transistor with multiple base lengths

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49107680A (US06633782-20031014-M00005.png) * 1973-02-02 1974-10-12

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3624454A (en) * 1969-09-15 1971-11-30 Gen Motors Corp Mesa-type semiconductor device
BE791487A (fr) * 1971-11-18 1973-03-16 Rca Corp Dispositif semiconducteur
US3755722A (en) * 1972-09-28 1973-08-28 Gen Motors Corp Resistor isolation for double mesa transistors
FR2216677B1 (US06633782-20031014-M00005.png) * 1973-02-02 1977-08-26 Radiotechnique Compelec
US3836997A (en) * 1973-09-26 1974-09-17 Rca Corp Semiconductor darlington circuit
US3836996A (en) * 1973-09-26 1974-09-17 Rca Corp Semiconductor darlington circuit
US3898483A (en) * 1973-10-18 1975-08-05 Fairchild Camera Instr Co Bipolar memory circuit
US3904450A (en) * 1974-04-26 1975-09-09 Bell Telephone Labor Inc Method of fabricating injection logic integrated circuits using oxide isolation

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49107680A (US06633782-20031014-M00005.png) * 1973-02-02 1974-10-12

Also Published As

Publication number Publication date
GB1531811A (en) 1978-11-08
DE2600375C3 (de) 1981-11-26
NL7600062A (nl) 1976-07-13
DE2600375A1 (de) 1976-07-15
IT1054024B (it) 1981-11-10
DE2600375B2 (de) 1981-03-12
US4058825A (en) 1977-11-15
FR2297495A1 (fr) 1976-08-06
JPS561782B2 (US06633782-20031014-M00005.png) 1981-01-16
CA1046167A (en) 1979-01-09
FR2297495B1 (US06633782-20031014-M00005.png) 1983-07-08

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