JPS5193177A - - Google Patents
Info
- Publication number
- JPS5193177A JPS5193177A JP50017804A JP1780475A JPS5193177A JP S5193177 A JPS5193177 A JP S5193177A JP 50017804 A JP50017804 A JP 50017804A JP 1780475 A JP1780475 A JP 1780475A JP S5193177 A JPS5193177 A JP S5193177A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Light Receiving Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50017804A JPS5193177A (cs) | 1975-02-14 | 1975-02-14 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50017804A JPS5193177A (cs) | 1975-02-14 | 1975-02-14 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5193177A true JPS5193177A (cs) | 1976-08-16 |
Family
ID=11953902
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50017804A Pending JPS5193177A (cs) | 1975-02-14 | 1975-02-14 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5193177A (cs) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5575274A (en) * | 1978-12-01 | 1980-06-06 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor light detecting device |
| JPS58180648U (ja) * | 1982-05-26 | 1983-12-02 | 日本電信電話株式会社 | 半導体受光素子 |
| EP2150991B1 (en) * | 2007-04-24 | 2017-09-27 | Koninklijke Philips N.V. | Method of forming an avalanche photodiode integrated with cmos circuitry and silicon photomultiplier manufactured by said method |
-
1975
- 1975-02-14 JP JP50017804A patent/JPS5193177A/ja active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5575274A (en) * | 1978-12-01 | 1980-06-06 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor light detecting device |
| JPS58180648U (ja) * | 1982-05-26 | 1983-12-02 | 日本電信電話株式会社 | 半導体受光素子 |
| EP2150991B1 (en) * | 2007-04-24 | 2017-09-27 | Koninklijke Philips N.V. | Method of forming an avalanche photodiode integrated with cmos circuitry and silicon photomultiplier manufactured by said method |