JPS5190287A - - Google Patents

Info

Publication number
JPS5190287A
JPS5190287A JP50155173A JP15517375A JPS5190287A JP S5190287 A JPS5190287 A JP S5190287A JP 50155173 A JP50155173 A JP 50155173A JP 15517375 A JP15517375 A JP 15517375A JP S5190287 A JPS5190287 A JP S5190287A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50155173A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5190287A publication Critical patent/JPS5190287A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0802—Resistors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/921—Radiation hardened semiconductor device

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Pressure Sensors (AREA)
JP50155173A 1974-12-27 1975-12-26 Pending JPS5190287A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/536,847 US3965453A (en) 1974-12-27 1974-12-27 Piezoresistor effects in semiconductor resistors

Publications (1)

Publication Number Publication Date
JPS5190287A true JPS5190287A (en) 1976-08-07

Family

ID=24140168

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50155173A Pending JPS5190287A (en) 1974-12-27 1975-12-26

Country Status (11)

Country Link
US (1) US3965453A (en)
JP (1) JPS5190287A (en)
BE (1) BE837069A (en)
CA (1) CA1025562A (en)
DE (1) DE2558021A1 (en)
ES (1) ES443873A1 (en)
FR (1) FR2296268A1 (en)
GB (1) GB1514180A (en)
IT (1) IT1051976B (en)
NL (1) NL7515076A (en)
SE (1) SE411816B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53127284A (en) * 1977-04-13 1978-11-07 Japan Radio Co Ltd Semiconductor
JPS53129987A (en) * 1977-04-19 1978-11-13 Japan Radio Co Ltd Semiconductor

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4236832A (en) * 1977-06-29 1980-12-02 Tokyo Shibaura Denki Kabushiki Kaisha Strain insensitive integrated circuit resistor pair
DE2828607C3 (en) * 1977-06-29 1982-08-12 Tokyo Shibaura Denki K.K., Kawasaki, Kanagawa Semiconductor device
US4268848A (en) * 1979-05-07 1981-05-19 Motorola, Inc. Preferred device orientation on integrated circuits for better matching under mechanical stress
JPS5688350A (en) * 1979-12-19 1981-07-17 Toshiba Corp Semiconductor device
GB2139811B (en) * 1983-05-10 1986-11-05 Standard Telephones Cables Ltd Switch device
IN162554B (en) * 1984-04-30 1988-06-11 Rca Corp
JPS6156446A (en) * 1984-08-28 1986-03-22 Toshiba Corp Semiconductor device and manufacture thereof
US4713680A (en) * 1986-06-30 1987-12-15 Motorola, Inc. Series resistive network
US5889312A (en) * 1993-07-02 1999-03-30 Hitachi, Ltd. Semiconductor device having circuit element in stress gradient region by film for isolation and method of manufacturing the same
JP3571765B2 (en) * 1994-08-04 2004-09-29 三菱電機株式会社 Semiconductor pressure detector
JP2800112B2 (en) * 1996-02-28 1998-09-21 株式会社エスアイアイ・アールディセンター Semiconductor device
US7312485B2 (en) * 2000-11-29 2007-12-25 Intel Corporation CMOS fabrication process utilizing special transistor orientation
US6831263B2 (en) 2002-06-04 2004-12-14 Intel Corporation Very high speed photodetector system using a PIN photodiode array for position sensing
JP4710779B2 (en) 2006-09-28 2011-06-29 株式会社日立製作所 Mechanical quantity measuring device
JP5904959B2 (en) * 2013-03-08 2016-04-20 日立オートモティブシステムズ株式会社 Thermal air flow meter
US10352792B2 (en) * 2017-02-15 2019-07-16 Texas Instruments Incorporated Device and method for on-chip mechanical stress sensing
JP6662805B2 (en) * 2017-03-22 2020-03-11 日立オートモティブシステムズ株式会社 Resistor circuit, oscillation circuit, and in-vehicle sensor device
US11189536B2 (en) * 2018-12-31 2021-11-30 Micron Technology, Inc. Method and apparatus for on-chip stress detection
US11536773B2 (en) 2020-12-10 2022-12-27 Texas Instruments Incorporated Digital correction algorithms to improve battery voltage measurement accuracy

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5028794A (en) * 1973-07-13 1975-03-24

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3292128A (en) * 1961-12-26 1966-12-13 Gen Electric Semiconductor strain sensitive devices
US3277698A (en) * 1963-11-15 1966-10-11 Bell Telephone Labor Inc Stress sensing semiconductive devices
US3314035A (en) * 1964-09-04 1967-04-11 Electro Optical Systems Inc Semiconductor potentiometer
US3378648A (en) * 1964-12-31 1968-04-16 Gen Electric Doped piezoresistive phonograph pickup
US3456226A (en) * 1967-10-27 1969-07-15 Conrac Corp Strain gage configuration

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5028794A (en) * 1973-07-13 1975-03-24

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53127284A (en) * 1977-04-13 1978-11-07 Japan Radio Co Ltd Semiconductor
JPS53129987A (en) * 1977-04-19 1978-11-13 Japan Radio Co Ltd Semiconductor

Also Published As

Publication number Publication date
IT1051976B (en) 1981-05-20
BE837069A (en) 1976-04-16
NL7515076A (en) 1976-06-29
CA1025562A (en) 1978-01-31
SE411816B (en) 1980-02-04
DE2558021A1 (en) 1976-07-08
SE7514144L (en) 1976-06-28
US3965453A (en) 1976-06-22
GB1514180A (en) 1978-06-14
FR2296268A1 (en) 1976-07-23
ES443873A1 (en) 1977-05-16
FR2296268B1 (en) 1979-05-04

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