JPS5189384A - - Google Patents
Info
- Publication number
- JPS5189384A JPS5189384A JP50013335A JP1333575A JPS5189384A JP S5189384 A JPS5189384 A JP S5189384A JP 50013335 A JP50013335 A JP 50013335A JP 1333575 A JP1333575 A JP 1333575A JP S5189384 A JPS5189384 A JP S5189384A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50013335A JPS5837388B2 (ja) | 1975-02-03 | 1975-02-03 | キソウセイチヨウホウホウ |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50013335A JPS5837388B2 (ja) | 1975-02-03 | 1975-02-03 | キソウセイチヨウホウホウ |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5189384A true JPS5189384A (enrdf_load_html_response) | 1976-08-05 |
JPS5837388B2 JPS5837388B2 (ja) | 1983-08-16 |
Family
ID=11830246
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50013335A Expired JPS5837388B2 (ja) | 1975-02-03 | 1975-02-03 | キソウセイチヨウホウホウ |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5837388B2 (enrdf_load_html_response) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57123969A (en) * | 1981-01-26 | 1982-08-02 | Semiconductor Energy Lab Co Ltd | Formation of zinc oxide film by vapor phase method using plasma |
JPS58158916A (ja) * | 1982-03-16 | 1983-09-21 | Fujitsu Ltd | 半導体装置の製造方法 |
JPS58161763A (ja) * | 1982-03-17 | 1983-09-26 | Nippon Telegr & Teleph Corp <Ntt> | 真空蒸着法 |
JPS62260065A (ja) * | 1986-04-04 | 1987-11-12 | Canon Inc | 酸化すず薄膜の形成法 |
JPS62274072A (ja) * | 1986-05-21 | 1987-11-28 | Canon Inc | 酸化すず薄膜の改善された形成法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4843581A (enrdf_load_html_response) * | 1971-10-04 | 1973-06-23 | ||
JPS496168A (enrdf_load_html_response) * | 1972-04-10 | 1974-01-19 |
-
1975
- 1975-02-03 JP JP50013335A patent/JPS5837388B2/ja not_active Expired
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4843581A (enrdf_load_html_response) * | 1971-10-04 | 1973-06-23 | ||
JPS496168A (enrdf_load_html_response) * | 1972-04-10 | 1974-01-19 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57123969A (en) * | 1981-01-26 | 1982-08-02 | Semiconductor Energy Lab Co Ltd | Formation of zinc oxide film by vapor phase method using plasma |
JPS58158916A (ja) * | 1982-03-16 | 1983-09-21 | Fujitsu Ltd | 半導体装置の製造方法 |
JPS58161763A (ja) * | 1982-03-17 | 1983-09-26 | Nippon Telegr & Teleph Corp <Ntt> | 真空蒸着法 |
JPS62260065A (ja) * | 1986-04-04 | 1987-11-12 | Canon Inc | 酸化すず薄膜の形成法 |
JPS62274072A (ja) * | 1986-05-21 | 1987-11-28 | Canon Inc | 酸化すず薄膜の改善された形成法 |
Also Published As
Publication number | Publication date |
---|---|
JPS5837388B2 (ja) | 1983-08-16 |