JPS517034B1 - - Google Patents
Info
- Publication number
- JPS517034B1 JPS517034B1 JP530170A JP530170A JPS517034B1 JP S517034 B1 JPS517034 B1 JP S517034B1 JP 530170 A JP530170 A JP 530170A JP 530170 A JP530170 A JP 530170A JP S517034 B1 JPS517034 B1 JP S517034B1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Testing Of Individual Semiconductor Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP530170A JPS517034B1 (en) | 1970-01-20 | 1970-01-20 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP530170A JPS517034B1 (en) | 1970-01-20 | 1970-01-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS517034B1 true JPS517034B1 (en) | 1976-03-04 |
Family
ID=11607412
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP530170A Pending JPS517034B1 (en) | 1970-01-20 | 1970-01-20 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS517034B1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102565660A (en) * | 2012-01-04 | 2012-07-11 | 复旦大学 | Superspeed drain current gate voltage (Id-Vg) test method applied to metal oxide semiconductor field effect transistors (MOSFETs) elements |
-
1970
- 1970-01-20 JP JP530170A patent/JPS517034B1/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102565660A (en) * | 2012-01-04 | 2012-07-11 | 复旦大学 | Superspeed drain current gate voltage (Id-Vg) test method applied to metal oxide semiconductor field effect transistors (MOSFETs) elements |