JPS514912B1 - - Google Patents

Info

Publication number
JPS514912B1
JPS514912B1 JP46003654A JP365471A JPS514912B1 JP S514912 B1 JPS514912 B1 JP S514912B1 JP 46003654 A JP46003654 A JP 46003654A JP 365471 A JP365471 A JP 365471A JP S514912 B1 JPS514912 B1 JP S514912B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP46003654A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS514912B1 publication Critical patent/JPS514912B1/ja
Pending legal-status Critical Current

Links

Classifications

    • H10W10/019
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01Manufacture or treatment
    • H10D84/0123Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0188Manufacturing their isolation regions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01Manufacture or treatment
    • H10D84/02Manufacture or treatment characterised by using material-based technologies
    • H10D84/03Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401Combinations of FETs or IGBTs with BJTs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/84Combinations of enhancement-mode IGFETs and depletion-mode IGFETs
    • H10P14/24
    • H10P14/2905
    • H10P14/3411
    • H10P50/642
    • H10W10/10

Landscapes

  • Recrystallisation Techniques (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Element Separation (AREA)
  • Weting (AREA)
JP46003654A 1970-02-05 1971-02-02 Pending JPS514912B1 (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7001607A NL7001607A (enExample) 1970-02-05 1970-02-05

Publications (1)

Publication Number Publication Date
JPS514912B1 true JPS514912B1 (enExample) 1976-02-16

Family

ID=19809248

Family Applications (1)

Application Number Title Priority Date Filing Date
JP46003654A Pending JPS514912B1 (enExample) 1970-02-05 1971-02-02

Country Status (9)

Country Link
JP (1) JPS514912B1 (enExample)
BE (1) BE762493A (enExample)
CA (1) CA918302A (enExample)
CH (1) CH518625A (enExample)
DE (1) DE2102018A1 (enExample)
FR (1) FR2079263B1 (enExample)
GB (1) GB1336480A (enExample)
NL (1) NL7001607A (enExample)
SE (1) SE357100B (enExample)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA952628A (en) * 1963-12-16 1974-08-06 David A. Maxwell Semiconductor structure and method
US3648128A (en) * 1968-05-25 1972-03-07 Sony Corp An integrated complementary transistor circuit chip with polycrystalline contact to buried collector regions

Also Published As

Publication number Publication date
GB1336480A (en) 1973-11-07
SE357100B (enExample) 1973-06-12
CH518625A (de) 1972-01-31
FR2079263A1 (enExample) 1971-11-12
DE2102018A1 (de) 1971-08-19
FR2079263B1 (enExample) 1976-05-28
BE762493A (fr) 1971-08-03
CA918302A (en) 1973-01-02
NL7001607A (enExample) 1971-08-09

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