JPS5147032B1 - - Google Patents
Info
- Publication number
- JPS5147032B1 JPS5147032B1 JP45026024A JP2602470A JPS5147032B1 JP S5147032 B1 JPS5147032 B1 JP S5147032B1 JP 45026024 A JP45026024 A JP 45026024A JP 2602470 A JP2602470 A JP 2602470A JP S5147032 B1 JPS5147032 B1 JP S5147032B1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP45026024A JPS5147032B1 (zh) | 1970-03-30 | 1970-03-30 | |
| US05/121,375 US4015281A (en) | 1970-03-30 | 1971-03-05 | MIS-FETs isolated on common substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP45026024A JPS5147032B1 (zh) | 1970-03-30 | 1970-03-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5147032B1 true JPS5147032B1 (zh) | 1976-12-13 |
Family
ID=12182118
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP45026024A Pending JPS5147032B1 (zh) | 1970-03-30 | 1970-03-30 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5147032B1 (zh) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008504685A (ja) * | 2004-06-23 | 2008-02-14 | マイクロン テクノロジー，インコーポレイテッド | Ａｌ２Ｏ３誘電体を用いるメモリ・セルの絶縁構造 |
| JP2008277836A (ja) * | 1999-04-26 | 2008-11-13 | Renesas Technology Corp | 半導体集積回路装置 |
-
1970
- 1970-03-30 JP JP45026024A patent/JPS5147032B1/ja active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008277836A (ja) * | 1999-04-26 | 2008-11-13 | Renesas Technology Corp | 半導体集積回路装置 |
| JP2008504685A (ja) * | 2004-06-23 | 2008-02-14 | マイクロン テクノロジー，インコーポレイテッド | Ａｌ２Ｏ３誘電体を用いるメモリ・セルの絶縁構造 |
| US8084806B2 (en) | 2004-06-23 | 2011-12-27 | Micron Technology, Inc. | Isolation structure for a memory cell using A12O3 dielectric |
| US8278182B2 (en) | 2004-06-23 | 2012-10-02 | Micron Technology, Inc. | Isolation structure for a memory cell using Al1O3 dielectric |