JPS5143781B2 - - Google Patents

Info

Publication number
JPS5143781B2
JPS5143781B2 JP49112237A JP11223774A JPS5143781B2 JP S5143781 B2 JPS5143781 B2 JP S5143781B2 JP 49112237 A JP49112237 A JP 49112237A JP 11223774 A JP11223774 A JP 11223774A JP S5143781 B2 JPS5143781 B2 JP S5143781B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP49112237A
Other languages
Japanese (ja)
Other versions
JPS5062036A (enExample
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5062036A publication Critical patent/JPS5062036A/ja
Publication of JPS5143781B2 publication Critical patent/JPS5143781B2/ja
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G75/00—Macromolecular compounds obtained by reactions forming a linkage containing sulfur with or without nitrogen, oxygen, or carbon in the main chain of the macromolecule
    • C08G75/20—Polysulfones
    • C08G75/205—Copolymers of sulfur dioxide with unsaturated organic compounds
    • C08G75/22—Copolymers of sulfur dioxide with unsaturated aliphatic compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/143—Electron beam

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Electrophotography Using Other Than Carlson'S Method (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Beam Exposure (AREA)
  • Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
  • Optical Record Carriers And Manufacture Thereof (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
JP49112237A 1973-09-27 1974-09-27 Expired JPS5143781B2 (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US401213A US3893127A (en) 1973-09-27 1973-09-27 Electron beam recording media

Publications (2)

Publication Number Publication Date
JPS5062036A JPS5062036A (enExample) 1975-05-27
JPS5143781B2 true JPS5143781B2 (enExample) 1976-11-24

Family

ID=23586832

Family Applications (1)

Application Number Title Priority Date Filing Date
JP49112237A Expired JPS5143781B2 (enExample) 1973-09-27 1974-09-27

Country Status (7)

Country Link
US (1) US3893127A (enExample)
JP (1) JPS5143781B2 (enExample)
CA (1) CA1295167C (enExample)
DE (1) DE2445433A1 (enExample)
FR (2) FR2245985B1 (enExample)
GB (1) GB1478875A (enExample)
NL (1) NL7412715A (enExample)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3964909A (en) * 1975-03-06 1976-06-22 Rca Corporation Method of preparing a pattern on a silicon wafer
US4007295A (en) * 1975-07-28 1977-02-08 Rca Corporation Olefin-SO2 copolymer film adhesion to a substrate
US4179532A (en) * 1976-04-09 1979-12-18 Polygram Gmbh Process for producing a disc-shaped information carrier which has information in the form of a beam-reflecting structure
US4126712A (en) * 1976-07-30 1978-11-21 Rca Corporation Method of transferring a surface relief pattern from a wet poly(olefin sulfone) layer to a metal layer
US4045318A (en) * 1976-07-30 1977-08-30 Rca Corporation Method of transferring a surface relief pattern from a poly(olefin sulfone) layer to a metal layer
US4097618A (en) * 1977-03-09 1978-06-27 Rca Corporation Method of transferring a surface relief pattern from a poly(1-methyl-1-cyclopropene sulfone) layer to a non-metallic inorganic layer
US4289845A (en) * 1978-05-22 1981-09-15 Bell Telephone Laboratories, Inc. Fabrication based on radiation sensitive resists and related products
JPS5579440A (en) * 1978-12-12 1980-06-14 Toshiba Corp Image forming material
US4245229A (en) * 1979-01-26 1981-01-13 Exxon Research & Engineering Co. Optical recording medium
US4262083A (en) * 1979-09-18 1981-04-14 Rca Corporation Positive resist for electron beam and x-ray lithography and method of using same
US4330671A (en) * 1979-09-18 1982-05-18 Rca Corporation Positive resist for electron beam and x-ray lithography and method of using same
US4262073A (en) * 1979-11-23 1981-04-14 Rca Corporation Positive resist medium and method of employing same
US4263386A (en) * 1980-03-06 1981-04-21 Rca Corporation Method for the manufacture of multi-color microlithographic displays
US4357369A (en) * 1981-11-10 1982-11-02 Rca Corporation Method of plasma etching a substrate
US4397939A (en) * 1981-12-14 1983-08-09 Rca Corporation Method of using a positive electron beam resist medium
US4397938A (en) * 1981-12-14 1983-08-09 Rca Corporation Method of forming resist patterns using X-rays or electron beam
US4398001A (en) * 1982-03-22 1983-08-09 International Business Machines Corporation Terpolymer resist compositions
JPS59222928A (ja) * 1983-06-02 1984-12-14 Matsushita Electronics Corp マスク製作方法
EP0157262B1 (en) * 1984-03-19 1988-06-08 Nippon Oil Co. Ltd. Novel electron beam resist materials
US4657841A (en) * 1985-10-28 1987-04-14 Bell Communications Research, Inc. Electron beam sensitive positive resist comprising the polymerization product of an ω-alkenyltrimethyl silane monomer with sulfur dioxide
US4810617A (en) * 1985-11-25 1989-03-07 General Electric Company Treatment of planarizing layer in multilayer electron beam resist
US5298367A (en) * 1991-03-09 1994-03-29 Basf Aktiengesellschaft Production of micromoldings having a high aspect ratio
EP0698825A1 (en) * 1994-07-29 1996-02-28 AT&T Corp. An energy sensitive resist material and a process for device fabrication using the resist material
US7550249B2 (en) * 2006-03-10 2009-06-23 Az Electronic Materials Usa Corp. Base soluble polymers for photoresist compositions
US7704670B2 (en) * 2006-06-22 2010-04-27 Az Electronic Materials Usa Corp. High silicon-content thin film thermosets
US7759046B2 (en) * 2006-12-20 2010-07-20 Az Electronic Materials Usa Corp. Antireflective coating compositions
US8026040B2 (en) * 2007-02-20 2011-09-27 Az Electronic Materials Usa Corp. Silicone coating composition
WO2008104874A1 (en) * 2007-02-26 2008-09-04 Az Electronic Materials Usa Corp. Process for making siloxane polymers
CN101622296B (zh) * 2007-02-27 2013-10-16 Az电子材料美国公司 硅基抗反射涂料组合物

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2637664A (en) * 1949-06-23 1953-05-05 Phillips Petroleum Co Coating articles with an olefinsulfur dioxide resin
NL272746A (enExample) * 1960-12-27
US3336596A (en) * 1964-12-28 1967-08-15 Minnesota Mining & Mfg Medium for electron beam recording
US3535137A (en) * 1967-01-13 1970-10-20 Ibm Method of fabricating etch resistant masks
US3779806A (en) * 1972-03-24 1973-12-18 Ibm Electron beam sensitive polymer t-butyl methacrylate resist
SE391405B (sv) * 1972-05-01 1977-02-14 Western Electric Co Forfarande for astadkommande av resistmonster pa ett substrat
GB1421805A (en) * 1972-11-13 1976-01-21 Ibm Method of forming a positive resist

Also Published As

Publication number Publication date
GB1478875A (en) 1977-07-06
CA1295167C (en) 1992-02-04
US3893127A (en) 1975-07-01
DE2445433A1 (de) 1975-04-10
FR2436422A1 (fr) 1980-04-11
JPS5062036A (enExample) 1975-05-27
FR2436422B1 (fr) 1985-09-27
FR2245985A1 (enExample) 1975-04-25
NL7412715A (nl) 1975-04-02
FR2245985B1 (enExample) 1982-04-09

Similar Documents

Publication Publication Date Title
AR201758A1 (enExample)
AU465372B2 (enExample)
AR201235Q (enExample)
AR201231Q (enExample)
FR2245985B1 (enExample)
AU471343B2 (enExample)
AU465453B2 (enExample)
AU465434B2 (enExample)
AU450229B2 (enExample)
AR201229Q (enExample)
AU466283B2 (enExample)
AR199451A1 (enExample)
AU472848B2 (enExample)
AU461342B2 (enExample)
AR201432A1 (enExample)
AR200885A1 (enExample)
AU471461B2 (enExample)
AR197627A1 (enExample)
AU447540B2 (enExample)
AR196382A1 (enExample)
AR195948A1 (enExample)
AR210729A1 (enExample)
AR200256A1 (enExample)
AR195311A1 (enExample)
AR193950A1 (enExample)