JPS5139512B1 - - Google Patents
Info
- Publication number
- JPS5139512B1 JPS5139512B1 JP6485471A JP6485471A JPS5139512B1 JP S5139512 B1 JPS5139512 B1 JP S5139512B1 JP 6485471 A JP6485471 A JP 6485471A JP 6485471 A JP6485471 A JP 6485471A JP S5139512 B1 JPS5139512 B1 JP S5139512B1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/60—Wet etching
- H10P50/64—Wet etching of semiconductor materials
- H10P50/642—Chemical etching
- H10P50/646—Chemical etching of Group III-V materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
- H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W40/00—Arrangements for thermal protection or thermal control
- H10W40/10—Arrangements for heating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/20—Conductive package substrates serving as an interconnection, e.g. metal plates
- H10W70/24—Conductive package substrates serving as an interconnection, e.g. metal plates characterised by materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/551—Materials of bond wires
- H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
- H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/59—Bond pads specially adapted therefor
Landscapes
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL7012831A NL167277C (nl) | 1970-08-29 | 1970-08-29 | Halfgeleiderinrichting met een plaatvorming half- geleiderlichaam met over althans een deel van de dikte van het halfgeleiderlichaam afgeschuinde randen, dat is voorzien van een metalen elektrode die een gelijkrichtende overgang vormt met het halfgeleider- lichaam en werkwijze ter vervaardiging van de halfgeleiderinrichting. |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5139512B1 true JPS5139512B1 (enExample) | 1976-10-28 |
Family
ID=19810894
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6485471A Pending JPS5139512B1 (enExample) | 1970-08-29 | 1971-08-26 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US3775200A (enExample) |
| JP (1) | JPS5139512B1 (enExample) |
| AU (1) | AU466690B2 (enExample) |
| BE (1) | BE771917A (enExample) |
| CA (1) | CA925224A (enExample) |
| DE (1) | DE2142146C3 (enExample) |
| FR (1) | FR2103607B1 (enExample) |
| GB (1) | GB1356323A (enExample) |
| NL (1) | NL167277C (enExample) |
Families Citing this family (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4189342A (en) * | 1971-10-07 | 1980-02-19 | U.S. Philips Corporation | Semiconductor device comprising projecting contact layers |
| US3761783A (en) * | 1972-02-02 | 1973-09-25 | Sperry Rand Corp | Duel-mesa ring-shaped high frequency diode |
| JPS519269B2 (enExample) * | 1972-05-19 | 1976-03-25 | ||
| US3839110A (en) * | 1973-02-20 | 1974-10-01 | Bell Telephone Labor Inc | Chemical etchant for palladium |
| US4071397A (en) * | 1973-07-02 | 1978-01-31 | Motorola, Inc. | Silicon metallographic etch |
| DE2409312C3 (de) * | 1974-02-27 | 1981-01-08 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Halbleiteranordnung mit einer auf der Halbleiteroberfläche angeordneten Metallschicht und Verfahren zu ihrer Herstellung |
| DE2415487C3 (de) * | 1974-03-29 | 1978-04-27 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zur Herstellung von Leiterplatten nach dem Photoätzverfahren |
| US4092660A (en) * | 1974-09-16 | 1978-05-30 | Texas Instruments Incorporated | High power field effect transistor |
| US3956042A (en) * | 1974-11-07 | 1976-05-11 | Xerox Corporation | Selective etchants for thin film devices |
| US3932880A (en) * | 1974-11-26 | 1976-01-13 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device with Schottky barrier |
| FR2328286A1 (fr) * | 1975-10-14 | 1977-05-13 | Thomson Csf | Procede de fabrication de dispositifs a semiconducteurs, presentant une tres faible resistance thermique, et dispositifs obtenus par ledit procede |
| US4023260A (en) * | 1976-03-05 | 1977-05-17 | Bell Telephone Laboratories, Incorporated | Method of manufacturing semiconductor diodes for use in millimeter-wave circuits |
| US4023258A (en) * | 1976-03-05 | 1977-05-17 | Bell Telephone Laboratories, Incorporated | Method of manufacturing semiconductor diodes for use in millimeter-wave circuits |
| US4142893A (en) * | 1977-09-14 | 1979-03-06 | Raytheon Company | Spray etch dicing method |
| US4681657A (en) * | 1985-10-31 | 1987-07-21 | International Business Machines Corporation | Preferential chemical etch for doped silicon |
| US4784967A (en) * | 1986-12-19 | 1988-11-15 | American Telephone And Telegraph Company, At&T Bell Laboratories | Method for fabricating a field-effect transistor with a self-aligned gate |
| US6366266B1 (en) | 1999-09-02 | 2002-04-02 | Micron Technology, Inc. | Method and apparatus for programmable field emission display |
| DE19962431B4 (de) * | 1999-12-22 | 2005-10-20 | Micronas Gmbh | Verfahren zum Herstellen einer Halbleiteranordnung mit Haftzone für eine Passivierungsschicht |
| US7084475B2 (en) * | 2004-02-17 | 2006-08-01 | Velox Semiconductor Corporation | Lateral conduction Schottky diode with plural mesas |
| US7417266B1 (en) | 2004-06-10 | 2008-08-26 | Qspeed Semiconductor Inc. | MOSFET having a JFET embedded as a body diode |
| US7436039B2 (en) * | 2005-01-06 | 2008-10-14 | Velox Semiconductor Corporation | Gallium nitride semiconductor device |
| US8026568B2 (en) | 2005-11-15 | 2011-09-27 | Velox Semiconductor Corporation | Second Schottky contact metal layer to improve GaN Schottky diode performance |
| US7939853B2 (en) * | 2007-03-20 | 2011-05-10 | Power Integrations, Inc. | Termination and contact structures for a high voltage GaN-based heterojunction transistor |
| CN101542736A (zh) * | 2007-03-26 | 2009-09-23 | 住友电气工业株式会社 | 肖特基势垒二极管及其产生方法 |
| US8633094B2 (en) | 2011-12-01 | 2014-01-21 | Power Integrations, Inc. | GaN high voltage HFET with passivation plus gate dielectric multilayer structure |
| US8940620B2 (en) | 2011-12-15 | 2015-01-27 | Power Integrations, Inc. | Composite wafer for fabrication of semiconductor devices |
| US8928037B2 (en) | 2013-02-28 | 2015-01-06 | Power Integrations, Inc. | Heterostructure power transistor with AlSiN passivation layer |
| US11749758B1 (en) | 2019-11-05 | 2023-09-05 | Semiq Incorporated | Silicon carbide junction barrier schottky diode with wave-shaped regions |
| US11469333B1 (en) | 2020-02-19 | 2022-10-11 | Semiq Incorporated | Counter-doped silicon carbide Schottky barrier diode |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4512750Y1 (enExample) * | 1969-05-01 | 1970-06-03 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3110849A (en) * | 1960-10-03 | 1963-11-12 | Gen Electric | Tunnel diode device |
| US3214654A (en) * | 1961-02-01 | 1965-10-26 | Rca Corp | Ohmic contacts to iii-v semiconductive compound bodies |
| US3513022A (en) * | 1967-04-26 | 1970-05-19 | Rca Corp | Method of fabricating semiconductor devices |
-
1970
- 1970-08-29 NL NL7012831A patent/NL167277C/xx not_active IP Right Cessation
-
1971
- 1971-08-23 DE DE2142146A patent/DE2142146C3/de not_active Expired
- 1971-08-24 CA CA121176A patent/CA925224A/en not_active Expired
- 1971-08-25 AU AU32687/71A patent/AU466690B2/en not_active Expired
- 1971-08-25 US US3775200D patent/US3775200A/en not_active Expired - Lifetime
- 1971-08-26 GB GB4009271A patent/GB1356323A/en not_active Expired
- 1971-08-26 JP JP6485471A patent/JPS5139512B1/ja active Pending
- 1971-08-26 FR FR7131003A patent/FR2103607B1/fr not_active Expired
- 1971-08-27 BE BE771917A patent/BE771917A/xx unknown
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4512750Y1 (enExample) * | 1969-05-01 | 1970-06-03 |
Also Published As
| Publication number | Publication date |
|---|---|
| CA925224A (en) | 1973-04-24 |
| FR2103607B1 (enExample) | 1976-05-28 |
| FR2103607A1 (enExample) | 1972-04-14 |
| DE2142146C3 (de) | 1980-03-13 |
| US3775200A (en) | 1973-11-27 |
| NL7012831A (enExample) | 1972-03-02 |
| AU3268771A (en) | 1973-03-01 |
| BE771917A (fr) | 1972-02-28 |
| DE2142146A1 (de) | 1972-03-02 |
| AU466690B2 (en) | 1975-11-06 |
| NL167277C (nl) | 1981-11-16 |
| GB1356323A (en) | 1974-06-12 |
| DE2142146B2 (de) | 1979-07-12 |
| NL167277B (nl) | 1981-06-16 |