JPS5136878A - Handotaisochi no seizohoho - Google Patents

Handotaisochi no seizohoho

Info

Publication number
JPS5136878A
JPS5136878A JP49106498A JP10649874A JPS5136878A JP S5136878 A JPS5136878 A JP S5136878A JP 49106498 A JP49106498 A JP 49106498A JP 10649874 A JP10649874 A JP 10649874A JP S5136878 A JPS5136878 A JP S5136878A
Authority
JP
Japan
Prior art keywords
handotaisochi
seizohoho
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP49106498A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5753669B2 (enExample
Inventor
Haruo Yamagishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP49106498A priority Critical patent/JPS5136878A/ja
Priority to US05/609,899 priority patent/US4062103A/en
Priority to GB37001/75A priority patent/GB1495188A/en
Publication of JPS5136878A publication Critical patent/JPS5136878A/ja
Publication of JPS5753669B2 publication Critical patent/JPS5753669B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6738—Schottky barrier electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/675—Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium
    • H10D64/0124—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP49106498A 1974-09-14 1974-09-14 Handotaisochi no seizohoho Granted JPS5136878A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP49106498A JPS5136878A (en) 1974-09-14 1974-09-14 Handotaisochi no seizohoho
US05/609,899 US4062103A (en) 1974-09-14 1975-09-02 Method for manufacturing a semiconductor device
GB37001/75A GB1495188A (en) 1974-09-14 1975-09-09 Method for manufacturing a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP49106498A JPS5136878A (en) 1974-09-14 1974-09-14 Handotaisochi no seizohoho

Publications (2)

Publication Number Publication Date
JPS5136878A true JPS5136878A (en) 1976-03-27
JPS5753669B2 JPS5753669B2 (enExample) 1982-11-13

Family

ID=14435088

Family Applications (1)

Application Number Title Priority Date Filing Date
JP49106498A Granted JPS5136878A (en) 1974-09-14 1974-09-14 Handotaisochi no seizohoho

Country Status (2)

Country Link
US (1) US4062103A (enExample)
JP (1) JPS5136878A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002347947A (ja) * 2001-05-22 2002-12-04 Technica:Kk 粉粒体保管排出装置

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4215156A (en) * 1977-08-26 1980-07-29 International Business Machines Corporation Method for fabricating tantalum semiconductor contacts
US4374012A (en) * 1977-09-14 1983-02-15 Raytheon Company Method of making semiconductor device having improved Schottky-barrier junction
US4197551A (en) * 1977-09-14 1980-04-08 Raytheon Company Semiconductor device having improved Schottky-barrier junction
US4179533A (en) * 1978-04-25 1979-12-18 The United States Of America As Represented By The Secretary Of The Navy Multi-refractory films for gallium arsenide devices
US4325181A (en) * 1980-12-17 1982-04-20 The United States Of America As Represented By The Secretary Of The Navy Simplified fabrication method for high-performance FET
US4474623A (en) * 1982-04-26 1984-10-02 Raytheon Company Method of passivating a semiconductor body
US4622736A (en) * 1984-01-30 1986-11-18 Tektronix, Inc. Schottky barrier diodes
US4735913A (en) * 1986-05-06 1988-04-05 Bell Communications Research, Inc. Self-aligned fabrication process for GaAs MESFET devices
US5347149A (en) * 1989-11-29 1994-09-13 Texas Instruments Incorporated Integrated circuit and method
EP0811241A1 (en) * 1995-12-21 1997-12-10 Koninklijke Philips Electronics N.V. Method of manufacturing a semiconductor device with a pn junction provided through epitaxy
US7262434B2 (en) 2002-03-28 2007-08-28 Rohm Co., Ltd. Semiconductor device with a silicon carbide substrate and ohmic metal layer
US10141285B2 (en) * 2013-09-19 2018-11-27 Palo Alto Research Center Incorporated Externally induced charge patterning using rectifying devices
CN108475702B (zh) * 2015-12-25 2021-11-23 出光兴产株式会社 层叠体

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS497628A (enExample) * 1972-05-25 1974-01-23
JPS5067560A (enExample) * 1973-10-09 1975-06-06 Cutler Hammer Inc

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3906540A (en) * 1973-04-02 1975-09-16 Nat Semiconductor Corp Metal-silicide Schottky diode employing an aluminum connector

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS497628A (enExample) * 1972-05-25 1974-01-23
JPS5067560A (enExample) * 1973-10-09 1975-06-06 Cutler Hammer Inc

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002347947A (ja) * 2001-05-22 2002-12-04 Technica:Kk 粉粒体保管排出装置

Also Published As

Publication number Publication date
US4062103A (en) 1977-12-13
JPS5753669B2 (enExample) 1982-11-13

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