JPS5132543B2 - - Google Patents
Info
- Publication number
- JPS5132543B2 JPS5132543B2 JP48106998A JP10699873A JPS5132543B2 JP S5132543 B2 JPS5132543 B2 JP S5132543B2 JP 48106998 A JP48106998 A JP 48106998A JP 10699873 A JP10699873 A JP 10699873A JP S5132543 B2 JPS5132543 B2 JP S5132543B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]
- H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/422—PN diodes having the PN junctions in mesas
Landscapes
- Bipolar Transistors (AREA)
- Thyristors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP48106998A JPS5132543B2 (en。) | 1973-09-25 | 1973-09-25 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP48106998A JPS5132543B2 (en。) | 1973-09-25 | 1973-09-25 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5069974A JPS5069974A (en。) | 1975-06-11 |
| JPS5132543B2 true JPS5132543B2 (en。) | 1976-09-13 |
Family
ID=14447874
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP48106998A Expired JPS5132543B2 (en。) | 1973-09-25 | 1973-09-25 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5132543B2 (en。) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5631898B2 (en。) * | 1974-01-11 | 1981-07-24 | ||
| JPS55132964U (en。) * | 1979-03-14 | 1980-09-20 | ||
| JPS6459873A (en) * | 1987-08-31 | 1989-03-07 | Toshiba Corp | Semiconductor device |
-
1973
- 1973-09-25 JP JP48106998A patent/JPS5132543B2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5069974A (en。) | 1975-06-11 |