JPS5132497B2 - - Google Patents

Info

Publication number
JPS5132497B2
JPS5132497B2 JP782872A JP782872A JPS5132497B2 JP S5132497 B2 JPS5132497 B2 JP S5132497B2 JP 782872 A JP782872 A JP 782872A JP 782872 A JP782872 A JP 782872A JP S5132497 B2 JPS5132497 B2 JP S5132497B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP782872A
Other languages
Japanese (ja)
Other versions
JPS4877766A (xx
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP782872A priority Critical patent/JPS5132497B2/ja
Priority to US05/322,522 priority patent/US3933538A/en
Publication of JPS4877766A publication Critical patent/JPS4877766A/ja
Publication of JPS5132497B2 publication Critical patent/JPS5132497B2/ja
Expired legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP782872A 1972-01-18 1972-01-19 Expired JPS5132497B2 (xx)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP782872A JPS5132497B2 (xx) 1972-01-19 1972-01-19
US05/322,522 US3933538A (en) 1972-01-18 1973-01-10 Method and apparatus for production of liquid phase epitaxial layers of semiconductors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP782872A JPS5132497B2 (xx) 1972-01-19 1972-01-19

Publications (2)

Publication Number Publication Date
JPS4877766A JPS4877766A (xx) 1973-10-19
JPS5132497B2 true JPS5132497B2 (xx) 1976-09-13

Family

ID=11676443

Family Applications (1)

Application Number Title Priority Date Filing Date
JP782872A Expired JPS5132497B2 (xx) 1972-01-18 1972-01-19

Country Status (1)

Country Link
JP (1) JPS5132497B2 (xx)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0117831B2 (xx) * 1978-08-04 1989-04-03 Toshiaki Hosoi

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5418905B2 (xx) * 1973-10-24 1979-07-11
JPS5638054B2 (xx) * 1974-07-04 1981-09-03
JPS5720703B2 (xx) * 1974-12-05 1982-04-30
JPS51114067A (en) * 1975-04-01 1976-10-07 Nippon Telegr & Teleph Corp <Ntt> Liquid phase epitaxial growth towards the top of alxga1-xas base
JPS51114384A (en) * 1975-04-01 1976-10-08 Nippon Telegr & Teleph Corp <Ntt> Liquid phase epitaxial crystal growth
JPS52141172A (en) * 1976-05-20 1977-11-25 Stanley Electric Co Ltd Continuous liquiddgrowth method
JPS6034253B2 (ja) * 1976-05-21 1985-08-07 新技術開発事業団 液相エピタキシヤル成長方法
JPS554947A (en) * 1978-06-28 1980-01-14 Fujitsu Ltd Method of growing liquid phase epitaxial
JPS56129319A (en) * 1980-03-14 1981-10-09 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS58148426A (ja) * 1982-03-01 1983-09-03 Semiconductor Res Found 成長装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0117831B2 (xx) * 1978-08-04 1989-04-03 Toshiaki Hosoi

Also Published As

Publication number Publication date
JPS4877766A (xx) 1973-10-19

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