JPS5132187A - Denkaikokatoranjisuta - Google Patents

Denkaikokatoranjisuta

Info

Publication number
JPS5132187A
JPS5132187A JP49105404A JP10540474A JPS5132187A JP S5132187 A JPS5132187 A JP S5132187A JP 49105404 A JP49105404 A JP 49105404A JP 10540474 A JP10540474 A JP 10540474A JP S5132187 A JPS5132187 A JP S5132187A
Authority
JP
Japan
Prior art keywords
denkaikokatoranjisuta
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP49105404A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5746223B2 (enrdf_load_stackoverflow
Inventor
Hisato Ogawa
Kosei Kajiwara
Atsushi Abe
Tatsusuke Nakajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP49105404A priority Critical patent/JPS5132187A/ja
Publication of JPS5132187A publication Critical patent/JPS5132187A/ja
Publication of JPS5746223B2 publication Critical patent/JPS5746223B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • H10D30/635—Vertical IGFETs having no inversion channels, e.g. vertical accumulation channel FETs [ACCUFET] or normally-on vertical IGFETs

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP49105404A 1974-09-11 1974-09-11 Denkaikokatoranjisuta Granted JPS5132187A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP49105404A JPS5132187A (en) 1974-09-11 1974-09-11 Denkaikokatoranjisuta

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP49105404A JPS5132187A (en) 1974-09-11 1974-09-11 Denkaikokatoranjisuta

Publications (2)

Publication Number Publication Date
JPS5132187A true JPS5132187A (en) 1976-03-18
JPS5746223B2 JPS5746223B2 (enrdf_load_stackoverflow) 1982-10-01

Family

ID=14406667

Family Applications (1)

Application Number Title Priority Date Filing Date
JP49105404A Granted JPS5132187A (en) 1974-09-11 1974-09-11 Denkaikokatoranjisuta

Country Status (1)

Country Link
JP (1) JPS5132187A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53147469A (en) * 1977-05-27 1978-12-22 Nippon Telegr & Teleph Corp <Ntt> Vertical field effect transistor and production of the same
JPS54118180A (en) * 1978-03-07 1979-09-13 Pioneer Electronic Corp Insulated gate field effect transistor having triode characteristics and method of fabricating same
JPS5910275A (ja) * 1982-06-24 1984-01-19 ゼネラル・エレクトリック・カンパニイ 竪型絶縁ゲート電界効果トランジスタ装置とその製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50128475A (enrdf_load_stackoverflow) * 1974-03-27 1975-10-09

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50128475A (enrdf_load_stackoverflow) * 1974-03-27 1975-10-09

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53147469A (en) * 1977-05-27 1978-12-22 Nippon Telegr & Teleph Corp <Ntt> Vertical field effect transistor and production of the same
JPS54118180A (en) * 1978-03-07 1979-09-13 Pioneer Electronic Corp Insulated gate field effect transistor having triode characteristics and method of fabricating same
JPS5910275A (ja) * 1982-06-24 1984-01-19 ゼネラル・エレクトリック・カンパニイ 竪型絶縁ゲート電界効果トランジスタ装置とその製造方法

Also Published As

Publication number Publication date
JPS5746223B2 (enrdf_load_stackoverflow) 1982-10-01

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