JPS5121552B1 - - Google Patents
Info
- Publication number
- JPS5121552B1 JPS5121552B1 JP46001918A JP191871A JPS5121552B1 JP S5121552 B1 JPS5121552 B1 JP S5121552B1 JP 46001918 A JP46001918 A JP 46001918A JP 191871 A JP191871 A JP 191871A JP S5121552 B1 JPS5121552 B1 JP S5121552B1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
- H01L31/117—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation of the bulk effect radiation detector type, e.g. Ge-Li compensated PIN gamma-ray detectors
- H01L31/1175—Li compensated PIN gamma-ray detectors
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/909—Macrocell arrays, e.g. gate arrays with variable size or configuration of cells
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7002619A FR2074755A6 (en) | 1968-12-17 | 1970-01-26 | Semiconductor radiation detector |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS46299A JPS46299A (ja) | 1971-08-24 |
JPS5121552B1 true JPS5121552B1 (ja) | 1976-07-03 |
Family
ID=9049583
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP46001918A Pending JPS5121552B1 (ja) | 1970-01-26 | 1971-01-23 |
Country Status (5)
Country | Link |
---|---|
US (1) | US3742215A (ja) |
JP (1) | JPS5121552B1 (ja) |
CH (1) | CH518623A (ja) |
DE (1) | DE2103615A1 (ja) |
GB (1) | GB1334437A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5315740A (en) * | 1976-07-28 | 1978-02-14 | Hitachi Ltd | Scanning electronic microscope |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2192379B1 (ja) * | 1972-07-10 | 1977-07-22 | Radiotechnique Compelec | |
US4110621A (en) * | 1977-03-23 | 1978-08-29 | Butler-Newton, Inc. | Tomography X-ray detector |
US4605946A (en) * | 1984-08-16 | 1986-08-12 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Fet charge sensor and voltage probe |
US7105828B2 (en) * | 2004-02-10 | 2006-09-12 | Ge Medical Systems Global Technology Company, Llc | Hybrid x-ray detector |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3131305A (en) * | 1961-05-12 | 1964-04-28 | Merck & Co Inc | Semiconductor radiation detector |
US3351758A (en) * | 1965-04-15 | 1967-11-07 | Guy A Armantrout | Windowless high-resolution solid state radiation detector |
US3424910A (en) * | 1965-04-19 | 1969-01-28 | Hughes Aircraft Co | Switching circuit using a two-carrier negative resistance device |
-
1971
- 1971-01-22 US US00108799A patent/US3742215A/en not_active Expired - Lifetime
- 1971-01-22 CH CH99871A patent/CH518623A/de not_active IP Right Cessation
- 1971-01-23 JP JP46001918A patent/JPS5121552B1/ja active Pending
- 1971-01-26 DE DE19712103615 patent/DE2103615A1/de active Pending
- 1971-04-19 GB GB2025971A patent/GB1334437A/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5315740A (en) * | 1976-07-28 | 1978-02-14 | Hitachi Ltd | Scanning electronic microscope |
Also Published As
Publication number | Publication date |
---|---|
CH518623A (de) | 1972-01-31 |
US3742215A (en) | 1973-06-26 |
JPS46299A (ja) | 1971-08-24 |
DE2103615A1 (de) | 1971-08-05 |
GB1334437A (en) | 1973-10-17 |