FR2074755A6 - Semiconductor radiation detector - Google Patents

Semiconductor radiation detector

Info

Publication number
FR2074755A6
FR2074755A6 FR7002619A FR7002619A FR2074755A6 FR 2074755 A6 FR2074755 A6 FR 2074755A6 FR 7002619 A FR7002619 A FR 7002619A FR 7002619 A FR7002619 A FR 7002619A FR 2074755 A6 FR2074755 A6 FR 2074755A6
Authority
FR
France
Prior art keywords
region
radiation detector
semiconductor radiation
cut out
incident radiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7002619A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to US00108799A priority Critical patent/US3742215A/en
Priority to CH99871A priority patent/CH518623A/en
Priority to JP46001918A priority patent/JPS5121552B1/ja
Priority to DE19712103615 priority patent/DE2103615A1/en
Priority to GB2025971A priority patent/GB1334437A/en
Application granted granted Critical
Publication of FR2074755A6 publication Critical patent/FR2074755A6/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
    • H01L31/117—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation of the bulk effect radiation detector type, e.g. Ge-Li compensated PIN gamma-ray detectors
    • H01L31/1175—Li compensated PIN gamma-ray detectors

Abstract

The crystal consists of a first and a second outer region of opposite conductivity types with an intrinsic region separating them. On the side opposed to the incident radiation is a cut out forming an input window and the depth is at least equal to the thickness of its associated p or n type region. A corresponding matching cut out is made in the second region aligned with the window, so that when elements are stacked together with then region of one contacting the p region of the next, the incident radiation has to pass only through the intrinsic layers on the stack.
FR7002619A 1968-12-17 1970-01-26 Semiconductor radiation detector Expired FR2074755A6 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
US00108799A US3742215A (en) 1970-01-26 1971-01-22 Method and apparatus for a semiconductor radiation detector
CH99871A CH518623A (en) 1970-01-26 1971-01-22 Semiconductor radiation detector and method of making the same
JP46001918A JPS5121552B1 (en) 1970-01-26 1971-01-23
DE19712103615 DE2103615A1 (en) 1970-01-26 1971-01-26 Semiconductor radiation detector and method of making the same
GB2025971A GB1334437A (en) 1970-01-26 1971-04-19 Semiconductor nuclear radiation detectors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR178631 1968-12-17

Publications (1)

Publication Number Publication Date
FR2074755A6 true FR2074755A6 (en) 1971-10-08

Family

ID=8658469

Family Applications (2)

Application Number Title Priority Date Filing Date
FR178631A Expired FR1598473A (en) 1968-12-17 1968-12-17
FR7002619A Expired FR2074755A6 (en) 1968-12-17 1970-01-26 Semiconductor radiation detector

Family Applications Before (1)

Application Number Title Priority Date Filing Date
FR178631A Expired FR1598473A (en) 1968-12-17 1968-12-17

Country Status (1)

Country Link
FR (2) FR1598473A (en)

Also Published As

Publication number Publication date
FR1598473A (en) 1970-07-06

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