JPS5119478A - Handotaisochino seizohoho - Google Patents

Handotaisochino seizohoho

Info

Publication number
JPS5119478A
JPS5119478A JP9121474A JP9121474A JPS5119478A JP S5119478 A JPS5119478 A JP S5119478A JP 9121474 A JP9121474 A JP 9121474A JP 9121474 A JP9121474 A JP 9121474A JP S5119478 A JPS5119478 A JP S5119478A
Authority
JP
Japan
Prior art keywords
handotaisochino seizohoho
handotaisochino
seizohoho
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9121474A
Other languages
English (en)
Inventor
Tadashi Kirisako
Takeshi Fukuda
Toshihiko Ono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP9121474A priority Critical patent/JPS5119478A/ja
Publication of JPS5119478A publication Critical patent/JPS5119478A/ja
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP9121474A 1974-08-09 1974-08-09 Handotaisochino seizohoho Pending JPS5119478A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9121474A JPS5119478A (en) 1974-08-09 1974-08-09 Handotaisochino seizohoho

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9121474A JPS5119478A (en) 1974-08-09 1974-08-09 Handotaisochino seizohoho

Publications (1)

Publication Number Publication Date
JPS5119478A true JPS5119478A (en) 1976-02-16

Family

ID=14020162

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9121474A Pending JPS5119478A (en) 1974-08-09 1974-08-09 Handotaisochino seizohoho

Country Status (1)

Country Link
JP (1) JPS5119478A (ja)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52124860A (en) * 1976-04-13 1977-10-20 Toshiba Corp Electrode formation method for semiconductor devices
JPS5568653A (en) * 1978-11-20 1980-05-23 Fujitsu Ltd Manufacturing method of semiconductor device
JPS5642367A (en) * 1979-09-14 1981-04-20 Toshiba Corp Manufacture of bipolar integrated circuit
JPS56125870A (en) * 1980-03-07 1981-10-02 Fujitsu Ltd Manufacture of semiconductor device
JPS57157545A (en) * 1981-03-25 1982-09-29 Toshiba Corp Manufacture of semiconductor device
JPS6270417A (ja) * 1985-09-02 1987-03-31 Idemitsu Kosan Co Ltd イミド基含有ポリエステルカ−ボネ−トおよびその製造法
US6320260B1 (en) 1993-10-12 2001-11-20 Kabushiki Kaisha Toshiba Semiconductor device and method for manufacturing the same

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52124860A (en) * 1976-04-13 1977-10-20 Toshiba Corp Electrode formation method for semiconductor devices
JPS5568653A (en) * 1978-11-20 1980-05-23 Fujitsu Ltd Manufacturing method of semiconductor device
JPS6125217B2 (ja) * 1978-11-20 1986-06-14 Fujitsu Ltd
JPS5642367A (en) * 1979-09-14 1981-04-20 Toshiba Corp Manufacture of bipolar integrated circuit
JPS56125870A (en) * 1980-03-07 1981-10-02 Fujitsu Ltd Manufacture of semiconductor device
JPS57157545A (en) * 1981-03-25 1982-09-29 Toshiba Corp Manufacture of semiconductor device
JPS6270417A (ja) * 1985-09-02 1987-03-31 Idemitsu Kosan Co Ltd イミド基含有ポリエステルカ−ボネ−トおよびその製造法
JPH0528244B2 (ja) * 1985-09-02 1993-04-23 Idemitsu Kosan Co
US6320260B1 (en) 1993-10-12 2001-11-20 Kabushiki Kaisha Toshiba Semiconductor device and method for manufacturing the same
US6326691B1 (en) 1993-10-12 2001-12-04 Kabushiki Kaisha Toshiba Semiconductor device and method for manufacturing the same

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