JPS51151055A - Transistor switch device - Google Patents

Transistor switch device

Info

Publication number
JPS51151055A
JPS51151055A JP7600875A JP7600875A JPS51151055A JP S51151055 A JPS51151055 A JP S51151055A JP 7600875 A JP7600875 A JP 7600875A JP 7600875 A JP7600875 A JP 7600875A JP S51151055 A JPS51151055 A JP S51151055A
Authority
JP
Japan
Prior art keywords
switch device
transistor switch
reduce
power source
voltage drop
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7600875A
Other languages
Japanese (ja)
Inventor
Masahiko Akamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP7600875A priority Critical patent/JPS51151055A/en
Publication of JPS51151055A publication Critical patent/JPS51151055A/en
Priority to US05/831,005 priority patent/US4189651A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K2217/00Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0036Means reducing energy consumption

Abstract

PURPOSE:To reduce the voltage drop of the switching transistor and reduce the required capacity of the base drive power source.
JP7600875A 1975-06-20 1975-06-20 Transistor switch device Pending JPS51151055A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP7600875A JPS51151055A (en) 1975-06-20 1975-06-20 Transistor switch device
US05/831,005 US4189651A (en) 1975-06-20 1977-09-06 Transistor switch device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7600875A JPS51151055A (en) 1975-06-20 1975-06-20 Transistor switch device

Publications (1)

Publication Number Publication Date
JPS51151055A true JPS51151055A (en) 1976-12-25

Family

ID=13592772

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7600875A Pending JPS51151055A (en) 1975-06-20 1975-06-20 Transistor switch device

Country Status (1)

Country Link
JP (1) JPS51151055A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63138732U (en) * 1987-03-04 1988-09-13

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63138732U (en) * 1987-03-04 1988-09-13

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