JPS51149125A - Method of manufacture of platee like si piecies - Google Patents
Method of manufacture of platee like si pieciesInfo
- Publication number
- JPS51149125A JPS51149125A JP51064434A JP6443476A JPS51149125A JP S51149125 A JPS51149125 A JP S51149125A JP 51064434 A JP51064434 A JP 51064434A JP 6443476 A JP6443476 A JP 6443476A JP S51149125 A JPS51149125 A JP S51149125A
- Authority
- JP
- Japan
- Prior art keywords
- piecies
- platee
- manufacture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
- H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/02—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method without using solvents
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Silicon Compounds (AREA)
- Photovoltaic Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19752525571 DE2525571A1 (en) | 1975-06-09 | 1975-06-09 | Silicon body formation with large surface area - by pouring molten silicon into container of molten metal immiscible with silicon |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS51149125A true JPS51149125A (en) | 1976-12-21 |
Family
ID=5948607
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP51064434A Pending JPS51149125A (en) | 1975-06-09 | 1976-06-02 | Method of manufacture of platee like si piecies |
Country Status (3)
Country | Link |
---|---|
JP (1) | JPS51149125A (en) |
BE (1) | BE839448A (en) |
DE (1) | DE2525571A1 (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2922055A1 (en) * | 1979-05-30 | 1980-12-11 | Siemens Ag | Doping silicon with carrier life time extender - using lead metal or gaseous compound by high temp. diffusion |
JP2625310B2 (en) * | 1991-01-08 | 1997-07-02 | シマテク,インコーポレイテッド | Method and apparatus for manufacturing silicon wafer |
DE4231708C2 (en) * | 1992-09-22 | 1995-02-02 | Siemens Ag | Method and device for producing plate-shaped salt bodies and use for producing plate-shaped salt bodies for phosphor plates |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1227132A (en) * | 1967-04-14 | 1971-04-07 |
-
1975
- 1975-06-09 DE DE19752525571 patent/DE2525571A1/en not_active Withdrawn
-
1976
- 1976-03-11 BE BE165066A patent/BE839448A/en not_active IP Right Cessation
- 1976-06-02 JP JP51064434A patent/JPS51149125A/en active Pending
Also Published As
Publication number | Publication date |
---|---|
BE839448A (en) | 1976-07-01 |
DE2525571A1 (en) | 1976-12-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
BG27553A3 (en) | Method of obtaining of 2- phenyl- 3- aroylxenzothiophenes | |
BG27557A4 (en) | Method of obtaining of cephemic compounds | |
BG27548A3 (en) | Method of obtaining of carbonylsubstituated 1- sulphanylbenzimidazoles | |
BG27542A3 (en) | Method of obtaining of 1- benzazolylalkyl- 4- substituated | |
BG24799A3 (en) | Method of obtaining benzoylureidediphenyl-esters | |
JPS529648A (en) | Method of selectively ionnetching silicon | |
BG27355A3 (en) | Method of obtaining of 11- desoxy- 16- ariloxy- w- tetranoprostaglandines | |
BG27899A3 (en) | Method of obtaining of highdispersed cianurchloride | |
BG27543A3 (en) | Method of obtaining of n- aryl- n- (1- l- 4- piperidinyj)- arylacetamides | |
BG24801A3 (en) | Method of obtaining l-pyroglutamyl-l-prolineamide | |
JPS5280397A (en) | Popymerization method of epsilonncaprolactam | |
JPS5253816A (en) | Method of manufacturing alphaaaminoo gammaamercaptobutyloonitrile | |
JPS527922A (en) | Method of manufacturing nnacetyl llmethionin | |
BG27732A3 (en) | Method of obtaining of di- substituated phenolethers of 3- amino- 2-hydroxipropane | |
JPS51149125A (en) | Method of manufacture of platee like si piecies | |
BG28057A4 (en) | Method of obtaining of 3- hydroxy- methylenchromanones | |
JPS5248624A (en) | Method of manufacturing dicyanobutene | |
JPS52757A (en) | Method of pipe manufacture | |
JPS5250560A (en) | Method of forming throughhhole | |
BG27373A3 (en) | Method of obtaining of gamapyrones | |
JPS5224962A (en) | Method of colddrolling | |
BG24228A3 (en) | Method of preparing n-alkenyl-2-aminomethylpyrrolidine | |
JPS51117418A (en) | Method of plastering | |
JPS5272358A (en) | Method of making wearrresistant impacttproof element | |
JPS5247961A (en) | Isorating method of steviocide |