JPS51148361A - Formation method of insulation film - Google Patents
Formation method of insulation filmInfo
- Publication number
- JPS51148361A JPS51148361A JP7258375A JP7258375A JPS51148361A JP S51148361 A JPS51148361 A JP S51148361A JP 7258375 A JP7258375 A JP 7258375A JP 7258375 A JP7258375 A JP 7258375A JP S51148361 A JPS51148361 A JP S51148361A
- Authority
- JP
- Japan
- Prior art keywords
- insulation film
- formation method
- oxigen
- compose
- etched
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C23C14/0084—Producing gradient compositions
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Weting (AREA)
Abstract
PURPOSE:To form an insulation film which has an appointed amount to be etched by varying the pressure of nitrogen and oxigen which compose an atmospheric gas gradually to get an opening having a necessary inclined face.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7258375A JPS588577B2 (en) | 1975-06-14 | 1975-06-14 | The best way to do it |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7258375A JPS588577B2 (en) | 1975-06-14 | 1975-06-14 | The best way to do it |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS51148361A true JPS51148361A (en) | 1976-12-20 |
JPS588577B2 JPS588577B2 (en) | 1983-02-16 |
Family
ID=13493533
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7258375A Expired JPS588577B2 (en) | 1975-06-14 | 1975-06-14 | The best way to do it |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS588577B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6010644A (en) * | 1983-06-30 | 1985-01-19 | Toshiba Corp | Semiconductor device and manufacture thereof |
-
1975
- 1975-06-14 JP JP7258375A patent/JPS588577B2/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6010644A (en) * | 1983-06-30 | 1985-01-19 | Toshiba Corp | Semiconductor device and manufacture thereof |
JPH0226374B2 (en) * | 1983-06-30 | 1990-06-08 | Tokyo Shibaura Electric Co |
Also Published As
Publication number | Publication date |
---|---|
JPS588577B2 (en) | 1983-02-16 |
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