JPS51142924A - Mis type memory - Google Patents

Mis type memory

Info

Publication number
JPS51142924A
JPS51142924A JP50066562A JP6656275A JPS51142924A JP S51142924 A JPS51142924 A JP S51142924A JP 50066562 A JP50066562 A JP 50066562A JP 6656275 A JP6656275 A JP 6656275A JP S51142924 A JPS51142924 A JP S51142924A
Authority
JP
Japan
Prior art keywords
type memory
mis type
memory
reset
selection signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50066562A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5516348B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Tsuneo Ito
Chie Kawashita
Kunihiko Ikuzaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP50066562A priority Critical patent/JPS51142924A/ja
Priority to DE19762625008 priority patent/DE2625008A1/de
Priority to NL7606038A priority patent/NL7606038A/xx
Publication of JPS51142924A publication Critical patent/JPS51142924A/ja
Publication of JPS5516348B2 publication Critical patent/JPS5516348B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4078Safety or protection circuits, e.g. for preventing inadvertent or unauthorised reading or writing; Status cells; Test cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Computer Security & Cryptography (AREA)
  • Static Random-Access Memory (AREA)
JP50066562A 1975-06-04 1975-06-04 Mis type memory Granted JPS51142924A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP50066562A JPS51142924A (en) 1975-06-04 1975-06-04 Mis type memory
DE19762625008 DE2625008A1 (de) 1975-06-04 1976-06-03 Halbleiter-speicher
NL7606038A NL7606038A (nl) 1975-06-04 1976-06-03 Mis-halfgeleidergeheugen.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50066562A JPS51142924A (en) 1975-06-04 1975-06-04 Mis type memory

Publications (2)

Publication Number Publication Date
JPS51142924A true JPS51142924A (en) 1976-12-08
JPS5516348B2 JPS5516348B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1980-05-01

Family

ID=13319494

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50066562A Granted JPS51142924A (en) 1975-06-04 1975-06-04 Mis type memory

Country Status (3)

Country Link
JP (1) JPS51142924A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE2625008A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
NL (1) NL7606038A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Also Published As

Publication number Publication date
NL7606038A (nl) 1976-12-07
JPS5516348B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1980-05-01
DE2625008A1 (de) 1976-12-09

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