JPS51122381A - Semiconductor device for ultra low temperature - Google Patents
Semiconductor device for ultra low temperatureInfo
- Publication number
- JPS51122381A JPS51122381A JP4718375A JP4718375A JPS51122381A JP S51122381 A JPS51122381 A JP S51122381A JP 4718375 A JP4718375 A JP 4718375A JP 4718375 A JP4718375 A JP 4718375A JP S51122381 A JPS51122381 A JP S51122381A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- low temperature
- ultra low
- speed
- normal operation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4718375A JPS5912027B2 (ja) | 1975-04-18 | 1975-04-18 | 極低温用半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4718375A JPS5912027B2 (ja) | 1975-04-18 | 1975-04-18 | 極低温用半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS51122381A true JPS51122381A (en) | 1976-10-26 |
JPS5912027B2 JPS5912027B2 (ja) | 1984-03-19 |
Family
ID=12767961
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4718375A Expired JPS5912027B2 (ja) | 1975-04-18 | 1975-04-18 | 極低温用半導体装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5912027B2 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5863168A (ja) * | 1981-10-12 | 1983-04-14 | Nippon Telegr & Teleph Corp <Ntt> | 電界効果型半導体装置 |
JPS6132462A (ja) * | 1984-07-25 | 1986-02-15 | Hitachi Ltd | 半導体装置の製造方法 |
-
1975
- 1975-04-18 JP JP4718375A patent/JPS5912027B2/ja not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5863168A (ja) * | 1981-10-12 | 1983-04-14 | Nippon Telegr & Teleph Corp <Ntt> | 電界効果型半導体装置 |
JPS6132462A (ja) * | 1984-07-25 | 1986-02-15 | Hitachi Ltd | 半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JPS5912027B2 (ja) | 1984-03-19 |
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