JPS51120181A - Method of producing fet transistor - Google Patents

Method of producing fet transistor

Info

Publication number
JPS51120181A
JPS51120181A JP3116976A JP3116976A JPS51120181A JP S51120181 A JPS51120181 A JP S51120181A JP 3116976 A JP3116976 A JP 3116976A JP 3116976 A JP3116976 A JP 3116976A JP S51120181 A JPS51120181 A JP S51120181A
Authority
JP
Japan
Prior art keywords
fet transistor
producing
producing fet
transistor
fet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3116976A
Other languages
English (en)
Japanese (ja)
Inventor
Gurumiiru Jiyatsuku
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Publication of JPS51120181A publication Critical patent/JPS51120181A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
JP3116976A 1975-03-21 1976-03-22 Method of producing fet transistor Pending JPS51120181A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7508943A FR2305023A1 (fr) 1975-03-21 1975-03-21 Procede de realisation d'un transistor a effet de champ et transistor obtenu par ce procede

Publications (1)

Publication Number Publication Date
JPS51120181A true JPS51120181A (en) 1976-10-21

Family

ID=9152916

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3116976A Pending JPS51120181A (en) 1975-03-21 1976-03-22 Method of producing fet transistor

Country Status (4)

Country Link
JP (1) JPS51120181A (it)
DE (1) DE2611804A1 (it)
FR (1) FR2305023A1 (it)
NL (1) NL7602896A (it)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1170185A (en) * 1967-07-28 1969-11-12 Hitachi Ltd Electrode Structure of a Semiconductor Device.

Also Published As

Publication number Publication date
NL7602896A (nl) 1976-09-23
DE2611804A1 (de) 1976-09-30
FR2305023B1 (it) 1978-06-23
FR2305023A1 (fr) 1976-10-15

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