JPS51118966A - Method of glazing activated surface of semiconductor * holder for practising thereby and application of passivating pn transition thereof - Google Patents

Method of glazing activated surface of semiconductor * holder for practising thereby and application of passivating pn transition thereof

Info

Publication number
JPS51118966A
JPS51118966A JP51029767A JP2976776A JPS51118966A JP S51118966 A JPS51118966 A JP S51118966A JP 51029767 A JP51029767 A JP 51029767A JP 2976776 A JP2976776 A JP 2976776A JP S51118966 A JPS51118966 A JP S51118966A
Authority
JP
Japan
Prior art keywords
practising
passivating
glazing
holder
transition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP51029767A
Other languages
English (en)
Japanese (ja)
Inventor
Hintsu Borufugangu
Kuuze Deiitaa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BBC Brown Boveri AG Switzerland
Original Assignee
BBC Brown Boveri AG Switzerland
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BBC Brown Boveri AG Switzerland filed Critical BBC Brown Boveri AG Switzerland
Publication of JPS51118966A publication Critical patent/JPS51118966A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies

Landscapes

  • Formation Of Insulating Films (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Casings For Electric Apparatus (AREA)
JP51029767A 1975-03-20 1976-03-18 Method of glazing activated surface of semiconductor * holder for practising thereby and application of passivating pn transition thereof Pending JPS51118966A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH355275A CH591762A5 (https=) 1975-03-20 1975-03-20

Publications (1)

Publication Number Publication Date
JPS51118966A true JPS51118966A (en) 1976-10-19

Family

ID=4258446

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51029767A Pending JPS51118966A (en) 1975-03-20 1976-03-18 Method of glazing activated surface of semiconductor * holder for practising thereby and application of passivating pn transition thereof

Country Status (4)

Country Link
JP (1) JPS51118966A (https=)
CH (1) CH591762A5 (https=)
DE (2) DE7513490U (https=)
FR (1) FR2305021A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5367363A (en) * 1976-11-27 1978-06-15 Mitsubishi Electric Corp Semiconductor device

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2469000A1 (fr) * 1979-10-30 1981-05-08 Silicium Semiconducteur Ssc Structure de thyristor tres haute tension glassive et son procede de fabrication
FR2515874A1 (fr) * 1981-11-05 1983-05-06 Comp Generale Electricite Procede d'encapsulation plastique de cellules solaires
DE3832750A1 (de) * 1988-09-27 1990-03-29 Asea Brown Boveri Leistungshalbleiterbauelement
DE3832732A1 (de) * 1988-09-27 1990-03-29 Asea Brown Boveri Leistungshalbleiterdiode

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1438826A (fr) * 1964-06-30 1966-05-13 Ibm Formation de films de verre par pulvérisation réactive
US3473959A (en) * 1964-08-10 1969-10-21 Licentia Gmbh Method for coating semiconductors and apparatus
US3437505A (en) * 1965-06-28 1969-04-08 Ibm Method for depositing glass particles on the entire exposed surface of an object
US3639975A (en) * 1969-07-30 1972-02-08 Gen Electric Glass encapsulated semiconductor device fabrication process

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5367363A (en) * 1976-11-27 1978-06-15 Mitsubishi Electric Corp Semiconductor device

Also Published As

Publication number Publication date
DE7513490U (de) 1977-05-26
CH591762A5 (https=) 1977-09-30
DE2518666A1 (de) 1976-09-30
FR2305021A1 (fr) 1976-10-15

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