JPS51110272A - Handotaisochi - Google Patents
HandotaisochiInfo
- Publication number
- JPS51110272A JPS51110272A JP50035848A JP3584875A JPS51110272A JP S51110272 A JPS51110272 A JP S51110272A JP 50035848 A JP50035848 A JP 50035848A JP 3584875 A JP3584875 A JP 3584875A JP S51110272 A JPS51110272 A JP S51110272A
- Authority
- JP
- Japan
- Prior art keywords
- handotaisochi
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
- Thyristors (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50035848A JPS51110272A (en) | 1975-03-24 | 1975-03-24 | Handotaisochi |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50035848A JPS51110272A (en) | 1975-03-24 | 1975-03-24 | Handotaisochi |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS51110272A true JPS51110272A (en) | 1976-09-29 |
Family
ID=12453401
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50035848A Pending JPS51110272A (en) | 1975-03-24 | 1975-03-24 | Handotaisochi |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS51110272A (cs) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02111079A (ja) * | 1988-06-16 | 1990-04-24 | Hyundai Electron Ind Co Ltd | 高電圧用半導体素子およびその製造方法 |
JP2008053446A (ja) * | 2006-08-24 | 2008-03-06 | Hamamatsu Photonics Kk | 半導体素子 |
-
1975
- 1975-03-24 JP JP50035848A patent/JPS51110272A/ja active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02111079A (ja) * | 1988-06-16 | 1990-04-24 | Hyundai Electron Ind Co Ltd | 高電圧用半導体素子およびその製造方法 |
JP2008053446A (ja) * | 2006-08-24 | 2008-03-06 | Hamamatsu Photonics Kk | 半導体素子 |
US8110836B2 (en) | 2006-08-24 | 2012-02-07 | Hamamatsu Photonics K.K. | Semiconductor device |