JPS51108784A - Handotaisochi - Google Patents
HandotaisochiInfo
- Publication number
- JPS51108784A JPS51108784A JP50033027A JP3302775A JPS51108784A JP S51108784 A JPS51108784 A JP S51108784A JP 50033027 A JP50033027 A JP 50033027A JP 3302775 A JP3302775 A JP 3302775A JP S51108784 A JPS51108784 A JP S51108784A
- Authority
- JP
- Japan
- Prior art keywords
- handotaisochi
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
- Thyristors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50033027A JPS51108784A (en) | 1975-03-20 | 1975-03-20 | Handotaisochi |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50033027A JPS51108784A (en) | 1975-03-20 | 1975-03-20 | Handotaisochi |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS51108784A true JPS51108784A (en) | 1976-09-27 |
Family
ID=12375292
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50033027A Pending JPS51108784A (en) | 1975-03-20 | 1975-03-20 | Handotaisochi |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS51108784A (cs) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5320869A (en) * | 1976-08-11 | 1978-02-25 | Fujitsu Ltd | High breakdown voltage semiconductor device |
JPS54121768U (cs) * | 1978-02-14 | 1979-08-25 | ||
JP2003282892A (ja) * | 2002-03-08 | 2003-10-03 | Internatl Business Mach Corp <Ibm> | 低容量esd耐性ダイオードの方法および構造 |
-
1975
- 1975-03-20 JP JP50033027A patent/JPS51108784A/ja active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5320869A (en) * | 1976-08-11 | 1978-02-25 | Fujitsu Ltd | High breakdown voltage semiconductor device |
JPS54121768U (cs) * | 1978-02-14 | 1979-08-25 | ||
JP2003282892A (ja) * | 2002-03-08 | 2003-10-03 | Internatl Business Mach Corp <Ibm> | 低容量esd耐性ダイオードの方法および構造 |